BD437G Datasheet and Replacement

BD435G, BD437G, BD439G,BD441GPlastic Medium-PowerSilicon NPN TransistorsThis series of plastic, medium-power silicon NPN transistors can beused for amplifier and switching applications.http://onsemi.comFeatures4.0 AMPERES Complementary Types are BD438 and BD442POWER TRANSISTORS These Devices are Pb-Free and are RoHS Compliant*NPN SILICONMAXIMUM RATINGSCOLLECTOR

BD435, BD437, BD439,BD441Plastic Medium PowerSilicon NPN TransistorThis series of plastic, medium-power silicon NPN transistors can beused for amplifier and switching applications. Complementary typeshttp://onsemi.comare BD438 and BD442.4.0 AMPERESFeaturesPOWER TRANSISTORS Pb-Free Packages are Available*NPN SILICONMAXIMUM RATI

Order this documentMOTOROLAby BD437/DSEMICONDUCTOR TECHNICAL DATABD437BD441Plastic Medium Power SiliconNPN Transistor4.0 AMPERES. . . for amplifier and switching applications. Complementary types are BD438 andPOWER TRANSISTORSBD442.NPN SILICONCASE 7708TO225AA TYPE

BD433/5/7BD434/6/8COMPLEMENTARY SILICON POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The BD433, BD435, and BD437 are siliconepitaxial-base NPN power transistors in JedecSOT-32 plastic package, intented for use inmedium power linear and switching applications.The BD433 is especially suitable for use in12car-radio output

BD433/5/7BD434/6/8COMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERREDSALESTYPE COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The BD433, BD435, and BD437 are siliconepitaxial-base NPN power transistors in JedecSOT-32 plastic package, intented for use inmedium power linear and switching applications.12The BD433 is especially suitable for use in3car

BD433/435/437Medium Power Linear and Switching Applications Complement to BD434, BD436 and BD438 respectivelyTO-12611. Emitter 2.Collector 3.BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage: BD433 22 V: BD435 32 V: BD437 45 V VCES Collector-Emitter Voltage: BD433

BD433/435/437 NPN EPITAXIAL SILICON TRANSISTORMEDIUM POWER LINEAR AND SWITCHINGTO-126APPLICATIONS Complement to BD434, BD436 and BD438 respectivelyABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector Base Voltage : BD433 VCBO 22 V: BD435 32 V: BD437 45 V Collector Emitter Voltage : BD433 VCES 22 V: BD435 32 V1. Emitter 2.Collector 3.Base: BD437 45 V

BD435G, BD437G, BD439G,BD441GPlastic Medium-PowerSilicon NPN TransistorsThis series of plastic, medium-power silicon NPN transistors can beused for amplifier and switching applications.http://onsemi.comFeatures4.0 AMPERES Complementary Types are BD438 and BD442POWER TRANSISTORS These Devices are Pb-Free and are RoHS Compliant*NPN SILICONMAXIMUM RATINGSCOLLECTOR

BD433S 1 1

BD435, BD437, BD439,BD441Plastic Medium PowerSilicon NPN TransistorThis series of plastic, medium-power silicon NPN transistors can beused for amplifier and switching applications. Complementary typeshttp://onsemi.comare BD438 and BD442.4.0 AMPERESFeaturesPOWER TRANSISTORS Pb-Free Packages are Available*NPN SILICONMAXIMUM RATI

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyEPITAXIAL SILICON POWER TRANSISTORS BD433 BD434BD435 BD436BD437 BD438BD439 BD440BD441 BD442NPN PNPECTO126 BPlastic PackageIntended for use in Medium Power Linear and Switching ApplicationsABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL BD433 BD435 BD437 BD439 BD441 UNITBD434 BD436

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate TransistorsBD433 / BD435 / BD437 TRANSISTOR (NPN)TO 126 FEATURES 1. EMITTER Amplifier and Switching Applications Complement To BD434, BD436 And BD438 2. COLLECTOR3. BASE Equivalent Circuit BD433 BD435 BD437 XX XX XXBD433,BD435,BD437=Device code Solid dot = Green molding

BD433/435/437(NPN)TO-126 TransistorTO-1261. EMITTER 2. COLLECTOR 3. BASE 3 21 Features Amplifier and switching applications 2.5007.4002.9001.1007.8001.500MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.900Symbol Parameter Value Units3.0004.1003.200VCBO Collector-Base Voltage BD433 22 10.6000.000 BD435 32 V 11.0000.300 BD437 45

Spec. No. : HT200201HI-SINCERITYIssued Date : 2001.04.01Revised Date : 2005.12.02MICROELECTRONICS CORP.Page No. : 1/4HBD437TCOMPLEMENTARY SILICON POWER TRANSISTORSDescriptionThe HBD437T is silison epitaxial-base NPN power transistor in TO-126 plasticpackage, intented for use in medium power linear and switching applications. Thecomplementary PNP type is HBD438T.TO-126A

NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HSBD437 APPLICATIONS Medium Power Linear switching Applications ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature -55~150TjJunction Temperature 150PCCollector DissipationTc=25

isc Silicon NPN Power Transistor BD437DESCRIPTIONCollector-Emitter Sustaining Voltage -: V = 45V(Min)CEO(SUS)Complement to type BD438Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for medium power linear and switchingapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Ba

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD433/435/437 DESCRIPTION With TO-126 package Complement to type BD434/436/438 APPLICATIONS For medium power linear and switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIO