All Transistors. BD439G Datasheet

 

BD439G Datasheet, Equivalent, Cross Reference Search

Type Designator: BD439G

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 36 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 3 MHz

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO225

BD439G Transistor Equivalent Substitute - Cross-Reference Search

 

BD439G Datasheet (PDF)

1.1. bd439g.pdf Size:60K _update

BD439G
BD439G

BD435, BD437, BD439, BD441 Plastic Medium Power Silicon NPN Transistor This series of plastic, medium-power silicon NPN transistors can be used for amplifier and switching applications. Complementary types http://onsemi.com are BD438 and BD442. 4.0 AMPERES Features POWER TRANSISTORS • Pb-Free Packages are Available* NPN SILICON ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATI

5.1. bd439 bd440 bd441 bd442.pdf Size:69K _st

BD439G
BD439G

BD439/BD440 BD441/BD442 COMPLEMENTARY SILICON POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The BD439 and BD441 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package, intented for use in power linear and switching applications. The complementary PNP types are BD440, and 1 2 BD442 respectively. 3 SOT-32

5.2. bd439 bd441.pdf Size:41K _fairchild_semi

BD439G
BD439G

BD439/441 Medium Power Linear and Switching Applications Complement to BD440, BD442 respectively TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : BD439 60 V : BD441 80 V VCES Collector-Emitter Voltage : BD439 60 V : BD441 80 V VCEO Collector

 5.3. bd439 bd441.pdf Size:57K _samsung

BD439G
BD439G

BD439/441 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING TO-126 APPLICATIONS Complement to BD440, BD442 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Base Voltage : BD439 VCBO 60 V : BD441 80 V Collector Emitter Voltage : BD439 VCES 60 V : BD441 80 V Collector Emitter Voltage : BD439 VCEO 60 V 1. Emitter 2.Collector 3.Base :

5.4. bd435 bd437 bd439 bd441.pdf Size:59K _onsemi

BD439G
BD439G

BD435, BD437, BD439, BD441 Plastic Medium Power Silicon NPN Transistor This series of plastic, medium-power silicon NPN transistors can be used for amplifier and switching applications. Complementary types http://onsemi.com are BD438 and BD442. 4.0 AMPERES Features POWER TRANSISTORS Pb-Free Packages are Available* NPN SILICON IIIIIIIIIIIIIIIIIII MAXIMUM RATINGS IIIIIIIIIIIIIIIIIII

 5.5. bd439-441.pdf Size:199K _secos

BD439G
BD439G

BD439/BD441 NPN Type Elektronische Bauelemente Plastic Encapsulate Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-126 3.2± 0.2 8.0±0.2 Features 2.0± 0.2 4.14±0.1 * Amplifier and switching applications O2.8±0.1 O3.2±0.1 11.0±0.2 1.4±0.1 1 2 3 o C MAXIMUM RATINGS* TA=25 unless otherwise noted 1.27±0.1 Symbol Paramete Value U

5.6. bd433 bd434 bd435 bd436 bd437 bd438 bd439 bd440 bd441 bd442.pdf Size:130K _cdil

BD439G
BD439G

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company EPITAXIAL SILICON POWER TRANSISTORS BD433 BD434 BD435 BD436 BD437 BD438 BD439 BD440 BD441 BD442 NPN PNP E C TO126 B Plastic Package Intended for use in Medium Power Linear and Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL BD433 BD435 BD437 BD439 BD441 UNIT BD434 BD436 BD

5.7. bd439 bd441.pdf Size:117K _inchange_semiconductor

BD439G
BD439G

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD439 BD441 DESCRIPTION Ў¤ With TO-126 package Ў¤ Complement to type BD440,BD442 APPLICATIONS Ў¤ For medium power linear and switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Ў¤ Absolute maximum ratings (Ta=25Ўж ) SYMBOL PARAMETER

5.8. bd439-441.pdf Size:184K _lge

BD439G
BD439G

BD439/441(NPN) TO-126 Transistor TO-126 1. EMITTER 2. COLLECTOR 3. BASE 3 2 1 Features Amplifier and switching applications 2.500 7.400 2.900 1.100 7.800 1.500 MAXIMUM RATINGS(TA=25? unless otherwise noted) 3.900 Symbol Parameter Value Units 3.000 4.100 3.200 VCBO Collector-Base Voltage BD439 60 10.600 V 0.000 11.000 BD441 80 0.300 VCEO Collector-Emitter

5.9. hsbd439.pdf Size:250K _shantou-huashan

BD439G

NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HSBD439 █ APPLICATIONS Medium Power Linear switching Applications █ ABSOLUTE MAXIMUM RATINGS(Ta=25℃) Tstg——Storage Temperature⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯ -55~150℃ Tj——Junction Temperature⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯ 150℃ PC——Collector Dissipation(Tc=25℃)

Datasheet: BD243CG , BD244BG , BD244CG , BD435G , BD436G , BD437G , BD437TG , BD438G , BD135 , BD440G , BD441G , BD442G , BD675AG , BD675G , BD676AG , BD676G , BD677AG .

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