All Transistors. BD675G Datasheet

 

BD675G Datasheet, Equivalent, Cross Reference Search

Type Designator: BD675G

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 40 W

Maximum Collector-Base Voltage |Vcb|: 45 V

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 1 MHz

Forward Current Transfer Ratio (hFE), MIN: 750

Noise Figure, dB: -

Package: TO225

BD675G Transistor Equivalent Substitute - Cross-Reference Search

 

BD675G Datasheet (PDF)

1.1. bd675g.pdf Size:77K _update

BD675G
BD675G

BD675G, BD675AG, BD677G, BD677AG, BD679G, BD679AG, BD681G Plastic Medium-Power Silicon NPN Darlingtons http://onsemi.com This series of plastic, medium-power silicon NPN Darlington transistors can be used as output devices in complementary 4.0 AMPERES general-purpose amplifier applications. POWER TRANSISTORS Features NPN SILICON • High DC Current Gain 60, 80, 100 VOLTS, 40 WATT

5.1. bd675ag.pdf Size:77K _update

BD675G
BD675G

BD675G, BD675AG, BD677G, BD677AG, BD679G, BD679AG, BD681G Plastic Medium-Power Silicon NPN Darlingtons http://onsemi.com This series of plastic, medium-power silicon NPN Darlington transistors can be used as output devices in complementary 4.0 AMPERES general-purpose amplifier applications. POWER TRANSISTORS Features NPN SILICON • High DC Current Gain 60, 80, 100 VOLTS, 40 WATT

5.2. bd675 bd675a bd677 bd677a bd679 bd679a bd681.pdf Size:112K _motorola

BD675G
BD675G

Order this document MOTOROLA by BD675/D SEMICONDUCTOR TECHNICAL DATA BD675 BD675A Plastic Medium-Power BD677 Silicon NPN Darlingtons BD677A . . . for use as output devices in complementary generalpurpose amplifier applica- BD679 tions. High DC Current Gain BD679A hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc Monolithic Construction BD681 * BD675, 675A, 677, 677A, 679, 679A, 68

 5.3. bd675 bd677 bd679 bd681.pdf Size:112K _motorola

BD675G
BD675G

Order this document MOTOROLA by BD675/D SEMICONDUCTOR TECHNICAL DATA BD675 BD675A Plastic Medium-Power BD677 Silicon NPN Darlingtons BD677A . . . for use as output devices in complementary generalpurpose amplifier applica- BD679 tions. High DC Current Gain BD679A hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc Monolithic Construction BD681 * BD675, 675A, 677, 677A, 679, 679A, 68

5.4. bd675a bd677a bd679a bd681.pdf Size:39K _fairchild_semi

BD675G
BD675G

BD675A/677A/679A/681 Medium Power Linear and Switching Applications Medium Power Darlington TR Complement to BD676A, BD678A, BD680A and BD682 respectively TO-126 1 NPN Epitaxial Silicon Transistor 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : BD675A 45 V : BD677A 60 V : BD679A 80

 5.5. bd675 bd677 bd679 bd681.pdf Size:88K _comset

BD675G
BD675G

NPN BD675/A - BD677/A - BD679/A - BD681/A SILICON DARLINGTON POWER TRANSISTORS The BD675/A-BD677/A-BD679/A-BD681/A are NPN They are eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. They are mounted in Jedec TO-126 plastic package. PNP complements are BD676/A-BD678/A-BD680/A-BD682/A ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit BD67

5.6. bd675 bd677 bd679 bd681 bd683.pdf Size:176K _cdil

BD675G
BD675G

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN PLASTIC POWER DARLINGTON TRANSISTORS BD675, BD675A BD677, BD677A BD679, BD679A BD681, BD683 TO126 Plastic Package E C B Complementary BD676, 676A, 678, 678A, 680, 680A, 682 & 684 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL BD675 677 679 681 683 UNITS BD675A 677A 679A VCBO Collector Base

5.7. bd675 bd677 bd679.pdf Size:118K _inchange_semiconductor

BD675G
BD675G

Inchange Semiconductor Product Specification Silicon NPN Darligton Power Transistors DESCRIPTION Ў¤ With TO-126 package Ў¤ Complement to type BD676/678/680 Ў¤ DARLINGTON Ў¤ High DC current gain APPLICATIONS Ў¤ For use as output devices in complementary general­purpose amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base BD675/

5.8. bd675a 677a 679a 681.pdf Size:117K _inchange_semiconductor

BD675G
BD675G

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD675A/677A/679A/681 DESCRIPTION Ў¤ With TO-126 package Ў¤ Complement to type BD676A/678A/680A/682 Ў¤ DARLINGTON APPLICATIONS Ў¤ For medium power linear and switching applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION Ў¤ Absolute maximum ratings (Ta=25Ў

5.9. bd675.pdf Size:121K _inchange_semiconductor

BD675G
BD675G

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BD675 DESCRIPTION ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = 45 V ·DC Current Gain— : hFE = 750(Min) @ IC= 1.5 A ·Complement to Type BD676 APPLICATIONS ·Designed for use as output devices in complementary general-purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS

5.10. bd675a.pdf Size:121K _inchange_semiconductor

BD675G
BD675G

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BD675A DESCRIPTION ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = 45 V ·DC Current Gain— : hFE = 750(Min) @ IC= 2 A ·Complement to Type BD676A APPLICATIONS ·Designed for use as output devices in complementary general-purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS

Datasheet: BD437G , BD437TG , BD438G , BD439G , BD440G , BD441G , BD442G , BD675AG , 431 , BD676AG , BD676G , BD677AG , BD677G , BD678AG , BD678G , BD679AG , BD679G .

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