BD681G Datasheet. Specs and Replacement
Type Designator: BD681G 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 750
Package: TO225
BD681G Substitution
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BD681G datasheet
BD675, BD675A, BD677, BD677A, BD679, BD679A, BD681 BD681 is a Preferred Device Plastic Medium-Power Silicon NPN Darlingtons http //onsemi.com This series of plastic, medium-power silicon NPN Darlington transistors can be used as output devices in complementary 4.0 AMPERES general-purpose amplifier applications. POWER TRANSISTORS Features NPN SILICON High DC Current Gain 60,... See More ⇒
bd675 bd675a bd677 bd677a bd679 bd679a bd681 bd675 bd677 bd679 bd681.pdf ![]()
Order this document MOTOROLA by BD675/D SEMICONDUCTOR TECHNICAL DATA BD675 BD675A Plastic Medium-Power BD677 Silicon NPN Darlingtons BD677A . . . for use as output devices in complementary general purpose amplifier applica- BD679 tions. High DC Current Gain BD679A hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc Monolithic Construction BD681 * BD675, 675A, 677, 677A, ... See More ⇒
bd677a bd679a bd681 bd678a bd680a bd682.pdf ![]()
BD677/A/679/A/681 BD678/A/680/A/682 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATION LINEAR AND SWITCHING INDUSTRIAL 1 2 EQUIPMENT 3 SOT-32 DESCRIPTION The BD677, BD677A, BD679, BD679A and BD681 are silicon epi... See More ⇒
bd677 bd677a bd678 bd678a bd679 bd679a bd680 bd680a bd681 bd682.pdf ![]()
BD677/A/679/A681 BD678/A/680/A/682 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS n SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD677, BD677A, BD679, BD679A and BD681 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration mounted in Jedec SOT-32 plastic package. They are intended for use in medium power linar and switching applications 1 2 ... See More ⇒
Detailed specifications: BD677G, BD678AG, BD678G, BD679AG, BD679G, BD680AG, BD680G, BD681A, 9014, BD682A, BD682G, BD683A, BD684A, BD772-GR, BD772-O, BD772-R, BD772-Y
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History: TIS90M | BD682G
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