BD682G Datasheet and Replacement

BD676, BD676A, BD678,BD678A, BD680, BD680A,BD682, BD682TPlastic Medium-PowerSilicon PNP Darlingtonshttp://onsemi.comThis series of plastic, medium-power silicon PNP Darlingtontransistors can be used as output devices in complementary4.0 AMP DARLINGTONgeneral-purpose amplifier applications.POWER TRANSISTORSFeaturesPNP SILICON High DC Current Gain -45, 60, 80, 100 V

Order this documentMOTOROLAby BD676/DSEMICONDUCTOR TECHNICAL DATABD676BD676APlastic Medium-PowerBD678Silicon PNP DarlingtonsBD678A. . . for use as output devices in complementary generalpurpose amplifier applica-BD680tions. High DC Current Gain BD680AhFE = 750 (Min) @ IC = 1.5 and 2.0 Adc Monolithic ConstructionBD682 BD676, 676A, 678, 678A, 680

BD677/A/679/A/681BD678/A/680/A/682COMPLEMENTARY SILICONPOWER DARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTONCONFIGURATION INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODEAPPLICATION LINEAR AND SWITCHING INDUSTRIAL12EQUIPMENT3SOT-32DESCRIPTIONThe BD677, BD677A, BD679, BD679A andBD681 are silicon epi

BD677/A/679/A681BD678/A/680/A/682COMPLEMENTARY SILICONPOWER DARLINGTON TRANSISTORSn SGS-THOMSON PREFERRED SALESTYPESDESCRIPTIONThe BD677, BD677A, BD679, BD679A andBD681 are silicon epitaxial-base NPN powertransistors in monolithic Darlington configurationmounted in Jedec SOT-32 plastic package.They are intended for use in medium power linarand switching applications12

BD676A/678A/680A/682Medium Power Linear and Switching Applications Medium Power Darlington TR Complement to BD675A, BD677A, BD679A and BD681 respectivelyTO-1261PNP Epitaxial Silicon Transistor1. Emitter 2.Collector 3.BaseAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage : BD676A - 45 V : BD678A - 60 V

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

PNP BD676/A - BD678/A - BD680/A - BD682/A SILICON DARLINGTON POWER TRANSISTORS The BD676/A-BD678/A-BD680/A-BD682/A are PNP transistors mounted in Jedec TO-126 plastic package. They are eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. NPN complements are BD675/A-BD677/A-BD679/A-BD681/A Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symb

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP DARLIGNTON POWER SILICON TRANSISTORS BD676, 676ABD678, 678ABD680, 680ABD682, 684TO126 Plastic PackageECBFor Use As Output Devices In Complementary General Purpose Amplifier Applications.COMPLEMENTARY TO BD675, 675A, 677, 677A, 679, 679A, 681 & 683BD678, 678A, 680, 680A ARE E

P N P S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HBD682 APPLICATIONS Medium Power Linear switching. ABSOLUTE MAXIMUM RATINGSTa=25 TO-126F TstgStorage Temperature -65~150TjJunction Temperature 150PCCollector DissipationTc=25

isc Silicon PNP Darlington Power Transistor BD682DESCRIPTIONCollectorEmitter Breakdown Voltage: V = -100V(BR)CEODC Current Gain: h = 750(Min) @ I = -1.5 AFE CComplement to Type BD681Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as output devices in complementarygeneral-purpose amplifier

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD676A/678A/680A/682 DESCRIPTION With TO-126 package Complement to type BD675A/677A/679A/681 DARLINGTON High DC current gain APPLICATIONS For medium power linear and switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute