BDS15SMD05 Datasheet, Equivalent, Cross Reference Search
Type Designator: BDS15SMD05
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 43.75 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO276AA
BDS15SMD05 Transistor Equivalent Substitute - Cross-Reference Search
BDS15SMD05 Datasheet (PDF)
bds15smd05.pdf
BDS13 BDS13SMD BDS13SMD05BDS14 BDS14SMD BDS14SMD05BDS15 BDS15SMD BDS15SMD05SILICON PNP EPITAXIAL BASE IN TO220 METAL ANDMECHANICAL DATACERAMIC SURFACEDimensions in mm(inches)MOUNT PACKAGES4.610.60.8FEATURES3.6 HERMETIC METAL OR CERAMIC PACKAGESDia. HIGH RELIABILITY MILITARY AND SPACE OPTIONS1 2 3 SCREENING TO CECC LEVELS FULLY ISOLATED (ME
bds15smd.pdf
BDS13 BDS13SMD BDS13SMD05BDS14 BDS14SMD BDS14SMD05BDS15 BDS15SMD BDS15SMD05SILICON PNP EPITAXIAL BASE IN TO220 METAL ANDMECHANICAL DATACERAMIC SURFACEDimensions in mm(inches)MOUNT PACKAGES4.610.60.8FEATURES3.6 HERMETIC METAL OR CERAMIC PACKAGESDia. HIGH RELIABILITY MILITARY AND SPACE OPTIONS1 2 3 SCREENING TO CECC LEVELS FULLY ISOLATED (ME
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
History: NSVB124XPDXV6T1G | 2N513
History: NSVB124XPDXV6T1G | 2N513
LIST
Last Update
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050