BDS17SMD05 Datasheet, Equivalent, Cross Reference Search

   Type Designator: BDS17SMD05
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 43.75 W
   Maximum Collector-Base Voltage |Vcb|: 150 V
   Maximum Collector-Emitter Voltage |Vce|: 150 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 30 MHz
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO276AA

BDS17SMD05 Transistor Equivalent Substitute - Cross-Reference Search

BDS17SMD05 Datasheet (PDF)

..1. Size:41K semelab
bds17smd05.pdf

BDS16 BDS16SMD BDS16SMD05BDS17 BDS17SMD BDS17SMD05MECHANICAL DATASILICON NPN EPITAXIAL BASEDimensions in mmIN TO220 METAL ANDSMD CERAMIC SURFACE MOUNTPACKAGESFEATURES HERMETIC METAL OR CERAMIC PACKAGES HIGH RELIABILITY MILITARY AND SPACE OPTIONS SCREENING TO CECC LEVELS FULLY ISOLATED (METAL VERSION)APPLICATIONS POWER LINEAR AND SWITCHINGTO220M

6.1. Size:41K semelab
bds17smd.pdf

9.1. Size:44K semelab
bds17xsmd.pdf

BDS16X BDS16XSMD BDS16XSMD05BDS17X BDS17XSMD BDS17XSMD05MECHANICAL DATADimensions in mmSILICON NPN EPITAXIAL BASE4.610.6IN TO220 METAL AND0.8SMD CERAMIC SURFACE MOUNT3.6PACKAGESDia.FEATURES1 2 3 HERMETIC METAL OR CERAMIC PACKAGES HIGH RELIABILITY MILITARY AND SPACE OPTIONS SCREENING TO CECC LEVELS1.0 FULLY ISOLATED (METAL VERSION)2.54 2.

9.2. Size:44K semelab
bds17xsmd05.pdf