BDS19SMD05 Datasheet. Specs and Replacement

Type Designator: BDS19SMD05  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 80 W

Maximum Collector-Base Voltage |Vcb|: 150 V

Maximum Collector-Emitter Voltage |Vce|: 150 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 10 MHz

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: TO276AA

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BDS19SMD05 datasheet

 ..1. Size:76K  semelab

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BDS19SMD05

BDS18 BDS18SMD BDS18SMD05 BDS19 BDS19SMD BDS19SMD05 SILICON PNP MECHANICAL DATA (Dimensions in mm) EPITAXIAL BASE IN TO220 METAL AND 4.6 10.6 0.8 SMD CERAMIC SURFACE MOUNT PACKAGES 3.6 Dia. FEATURES HERMETIC METAL OR CERAMIC 1 2 3 PACKAGES HIGH RELIABILITY MILITARY AND SPACE OPTIONS 1.0 SCREENING TO CECC LEVELS 2.54 2.70 FULLY ISOLATED (METAL VERSION) ... See More ⇒

 6.1. Size:76K  semelab

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BDS19SMD05

BDS18 BDS18SMD BDS18SMD05 BDS19 BDS19SMD BDS19SMD05 SILICON PNP MECHANICAL DATA (Dimensions in mm) EPITAXIAL BASE IN TO220 METAL AND 4.6 10.6 0.8 SMD CERAMIC SURFACE MOUNT PACKAGES 3.6 Dia. FEATURES HERMETIC METAL OR CERAMIC 1 2 3 PACKAGES HIGH RELIABILITY MILITARY AND SPACE OPTIONS 1.0 SCREENING TO CECC LEVELS 2.54 2.70 FULLY ISOLATED (METAL VERSION) ... See More ⇒

 9.1. Size:213K  inchange semiconductor

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BDS19SMD05

isc Silicon PNP Power Transistor BDS19 DESCRIPTION High Voltage V = -150V(Min) CEV Low Saturation Voltage- V = -1.5V(Max)@ I = -4A CE(sat) C High Reliablity Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power linear and switching application and General puepose power. ABSOLUTE MAXIMUM RATINGS(T =25 ) a ... See More ⇒

Detailed specifications: BDS17SMD, BDS17SMD05, BDS17X, BDS17XSMD, BDS17XSMD05, BDS18SMD, BDS18SMD05, BDS19SMD, 2N2222, BDS20SMD, BDS21SMD, BDS28AM3A, BDS28AN2, BDS28BM3A, BDS28BN2, BDS28BSMD, BDS28CM3A

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