BDX53CG Datasheet, Equivalent, Cross Reference Search
Type Designator: BDX53CG
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 60 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Collector Capacitance (Cc): 300 pF
Forward Current Transfer Ratio (hFE), MIN: 750
Noise Figure, dB: -
Package: TO220
BDX53CG Transistor Equivalent Substitute - Cross-Reference Search
BDX53CG Datasheet (PDF)
bdx53cg.pdf
BDX53B, BDX53C (NPN),BDX54B, BDX54C (PNP)Plastic Medium-PowerComplementary SiliconTransistorshttp://onsemi.comThese devices are designed for general-purpose amplifier andlow-speed switching applications.DARLINGTONFeatures8 AMPERE High DC Current Gain -COMPLEMENTARY SILICONhFE = 2500 (Typ) @ IC = 4.0 AdcPOWER TRANSISTORS Collector Emitter Sustaining Voltage -
bdx53bg bdx53cg bdx54bg bdx54cg.pdf
BDX53B, BDX53C (NPN),BDX54B, BDX54C (PNP)Plastic Medium-PowerComplementary SiliconTransistorswww.onsemi.comThese devices are designed for general-purpose amplifier andlow-speed switching applications.DARLINGTONFeatures8 AMPERE High DC Current Gain -COMPLEMENTARY SILICONhFE = 2500 (Typ) @ IC = 4.0 AdcPOWER TRANSISTORS Collector Emitter Sustaining Voltage - @ 1
bdx53b bdx53c bdx54b bdx54c.pdf
BDX53B - BDX53CBDX54B - BDX54CComplementary power Darlington transistorsFeatures Good hFE linearity High fT frequency Monolithic Darlington configuration with integrated antiparallel collector-emitter diodeApplication321 Audio amplifiersTO-220 Linear and switching industrial equipmentDescriptionThe devices are manufactured in planar base island t
bdx53c.pdf
March 2011BDX53/A/B/CNPN Epitaxial Silicon TransistorApplications Hammer Drivers, Audio Amplifiers Applications Power Liner and Switching ApplicationsFeatures Power Darlington TR Complement to BDX54, BDX54A, BDX54B and BDX54C respectivelyEquivalent CircuitCBTO-2201R1 R21.Base 2.Collector 3.EmitterR1 8.4kER2 0.3kAbsolute Maximum Ratin
bdx53b bdx53c bdx54b bdx54c.pdf
BDX53B, BDX53C (NPN),BDX54B, BDX54C (PNP)Plastic Medium-PowerComplementary SiliconTransistorswww.onsemi.comThese devices are designed for general-purpose amplifier andlow-speed switching applications.DARLINGTONFeatures8 AMPERE High DC Current Gain -COMPLEMENTARY SILICONhFE = 2500 (Typ) @ IC = 4.0 AdcPOWER TRANSISTORS Collector Emitter Sustaining Voltage - @ 1
bdx53c.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor BDX53CDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(sus)High DC Current Gain: h = 750(Min) @I = 3AFE CLow Collector Saturation Voltage: V = 2.0 V (Max) @ I = 3.0 ACE(sat) CComplement to Type BDX54CMinimum Lot-to-Lot variations for robust deviceperformance and reliable ope
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
