BDY90S Datasheet and Replacement

BDY90SDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 100V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

BDY90PNPN SILICON POWER TRANSISTOR NPN TRANSISTOR LOW COLLECTOR EMITTER SATURATIONVOLTAGE FAST-SWITCHING SPEEDAPPLICATION GENERAL PURPOSE SWITCHINGAPPLICATIONS GENERAL PURPOSE AMPLIFIERS 32 DC CURRENT AND BATTERY OPERATED1ELECTRONIC BALLAST TO-220DESCRIPTION The BDY90P is a silicon multiepitaxial planarNPN power transistors in TO-220 case intentedfor use in

BDY90HIGH CURRENT NPN SILICON TRANSISTOR SGS-THOMSON PREFERRED SALESTYPEAPPLICATIONS LINEAR AND SWITCHING INDUSTRIALEQUIPMENTDESCRIPTION The BDY90 is a silicon epitaxial planar NPN1power transistors in Jedec TO-3 metal case. Theyare intented for use in switching and linear 2applications in military and industrial equipment.TO-3INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIM

isc Silicon NPN Power Transistor BDY90DESCRIPTIONHigh DC Current Gain-: h = 30-120@I = 5AFE CExcellent Safe Operating AreaHigh Current CapabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in switching-control amplifiers, powergates,switching regulators, converters, and inverters.ABSOLUTE MAXIMUM

isc Silicon NPN Power Transistor BDY90ADESCRIPTIONHigh Current CapabilityCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in converters, inverters, switchingregulators and switching control amplifiers.ABSOLUTE MAXIMUM RATI