BR3DD13007V9P Specs and Replacement
Type Designator: BR3DD13007V9P
SMD Transistor Code: BR13007
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 80 W
Maximum Collector-Base Voltage |Vcb|: 700 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 8 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TO3P
BR3DD13007V9P Substitution
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BR3DD13007V9P datasheet
MJE13007V9(BR3DD13007V9P) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-3P NPN Silicon NPN Transistor in a TO-3P Plastic Package. / Features High Speed Switching / Applications High frequency electronic lighting ballast applications. / Equivalent Circuit ... See More ⇒
MJE13007X9(BR3DD13007X9P) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-3P NPN Silicon NPN Transistor in a TO-3P Plastic Package. / Features High Speed Switching / Applications High frequency electronic lighting, switching power supply applications. ... See More ⇒
MJE13007HV7(BR3DD13007HV7R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic light... See More ⇒
Detailed specifications: BR3DD13003VK1K, BR3DD13003VK7R, BR3DD13005LP7R, BR3DD13005P7R, BR3DD13005P8F, BR3DD13005T8F, BR3DD13007HV7R, BR3DD13007V8F, 2N2222, BR3DD13007X7R, BR3DD13007X8F, BR3DD13007X9P, BR3DD13009X7R, BR3DD13009X8F, BR3DD13009X9P, BR3DD13009Z8F, BR3DD5555R
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