BRF91 Specs and Replacement
Type Designator: BRF91
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 12 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 5000 MHz
Collector Capacitance (Cc): 0.5 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Package: M236
BRF91 Substitution
- BJT ⓘ Cross-Reference Search
BRF91 datasheet
140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE (215) 631-9840 FAX (215) 631-9855 BFR91 BFR91G RF & MICROWAVE DISCRETE * G Denotes RoHS Compliant, Pb Free Terminal Finish LOW POWER TRANSISTORS Features High Current-Gain Bandwidth Product, fT = 5 GHz (typ) @ IC = 30 mA Low Noise Figure NF = 1.9 dB (typ) @ f = 0.5 GHz, 2.5 dB (typ) @ 1GHz High Power Gain... See More ⇒
Detailed specifications: BSX33CSM, BSX33DCSM, BSX36DCSM, BSX62SMD, BSX62SMD05, BSX63SMD, BSX64SMD, BSX64SMD05, 2SD1047, BRF91G, BSP16T1G, BSP19AT1G, BSP20A, BSP52T1G, BSP52T3G, BSS50A, BSS51A
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