BRF91 Datasheet, Equivalent, Cross Reference Search
Type Designator: BRF91
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 12 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 5000 MHz
Collector Capacitance (Cc): 0.5 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: M236
BRF91 Transistor Equivalent Substitute - Cross-Reference Search
BRF91 Datasheet (PDF)
..1. Size:116K apt
brf91 brf91g.pdf
brf91 brf91g.pdf
140 COMMERCE DRIVEMONTGOMERYVILLE, PA18936-1013PHONE: (215) 631-9840FAX: (215) 631-9855BFR91BFR91GRF & MICROWAVE DISCRETE* G Denotes RoHS Compliant, Pb Free Terminal FinishLOW POWER TRANSISTORSFeatures High Current-Gain Bandwidth Product, fT = 5 GHz (typ) @ IC = 30 mA Low Noise Figure NF = 1.9 dB (typ) @ f = 0.5 GHz, 2.5 dB (typ) @ 1GHz High Power Gain
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
