2N779A Datasheet, Equivalent, Cross Reference Search

Type Designator: 2N779A

Material of Transistor: Ge

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.06 W

Maximum Collector-Base Voltage |Vcb|: 15 V

Maximum Collector-Emitter Voltage |Vce|: 15 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 100 °C

Transition Frequency (ft): 320 MHz

Collector Capacitance (Cc): 3 pF

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: TO18

2N779A Datasheet (PDF)

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