2SA1768T-AN Specs and Replacement
Type Designator: 2SA1768T-AN
SMD Transistor Code: A1768
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 180 V
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.7 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 120 MHz
Collector Capacitance (Cc): 11 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: SC71
- BJT ⓘ Cross-Reference Search
2SA1768T-AN datasheet
..1. Size:520K onsemi
2sa1768s-an 2sa1768t-an.pdf 
Ordering number EN3582A 2SA1768 Bipolar Transistor http //onsemi.com ( ) 180V, 160A, Low VCE sat PNP Single NMP Applicaitons Color TV sound output, converter, inverter Features Adoption of MBIT process High breakdown voltage, large current capacity Fast switching speed Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings... See More ⇒
7.1. Size:106K sanyo
2sa1768.pdf
Ordering number ENN3582 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1768/2SC4612 High-Voltage Switching Applications Applicaitons Package Dimensions Color TV sound output, converter, inverter. unit mm 2064A Features [2SA1768/2SC4612] 2.5 Adoption of MBIT process. 1.45 High breakdown voltage, large current capacity. 6.9 1.0 Fast switching speed. 0.6 0.9 0.5 1 ... See More ⇒
8.2. Size:87K sanyo
2sa1766.pdf
Ordering number EN3182B PNP Epitaxial Planar Silicon Transistor 2SA1766 High hFE, Low-Frequency General-Purpose Amplifier Applications Features Package Dimensions Adoption of FBET, MBIT processes. unit mm High DC current gain (hFE=500 to 1200). 2038 Large current capacity. [2SA1766] Low collector-to-emitter saturation voltage. High VEBO. E Emitter C Collec... See More ⇒
8.4. Size:102K sanyo
2sa1764.pdf
Ordering number EN3180B PNP Epitaxial Planar Silicon Transistor 2SA1764 High-Speed Switching Applications Features Package Dimensions Fast switching speed. unit mm Low collector saturation voltage. 2018A High gain-bandwidth product. [2SA1764] Small collector capacitacne. Small-sized package permitting the 2SA1764-applied sets to be made small and slim. Comp... See More ⇒
8.5. Size:99K sanyo
2sa1765.pdf
Ordering number EN3181A PNP Epitaxial Planar Silicon Transistor 2SA1765 High-Speed Switching Applications Features Package Dimensions Fast switching speed. unit mm Low collector saturation voltage. 2033 High gain-bandwidth product. [2SA1765] Small collector capacitance. Complementary pair with the 2SC4454. B Base C Collector E Emitter SANYO SPA Speci... See More ⇒
8.6. Size:110K sanyo
2sa1763.pdf
Ordering number EN3179A PNP Epitaxial Planar Silicon Transistor 2SA1763 High-Speed Switching Applications Features Package Dimensions Fast switching speed. unit mm Low collector saturation voltage. 2059 High gain-bandwidth product. [2SA1763] Small collector capacitance. Very small-sized package permitting the 2SA1763- applied sets to be made small and slim. ... See More ⇒
8.7. Size:39K panasonic
2sa1767 e.pdf
Transistor 2SA1767 Silicon PNP epitaxial planer type For general amplification Unit mm Complementary to 2SC1473A 5.0 0.2 4.0 0.2 Features High collector to emitter voltage VCEO. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 300 V +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to emitter voltage VCEO 300 V 1.27 1.27 Emitt... See More ⇒
8.8. Size:48K panasonic
2sa1762.pdf
Transistor 2SA1762 Silicon PNP epitaxial planer type For low-frequency driver amplification Unit mm Complementary to 2SC4606 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier. 0.85 Absolute Maximum Ratings (Ta=25 C) 0.55 0.1 0.45 0.05 Parameter Symbol ... See More ⇒
8.9. Size:52K panasonic
2sa1762 e.pdf
Transistor 2SA1762 Silicon PNP epitaxial planer type For low-frequency driver amplification Unit mm Complementary to 2SC4606 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier. 0.85 Absolute Maximum Ratings (Ta=25 C) 0.55 0.1 0.45 0.05 Parameter Symbol ... See More ⇒
8.10. Size:36K panasonic
2sa1767.pdf
Transistor 2SA1767 Silicon PNP epitaxial planer type For general amplification Unit mm Complementary to 2SC1473A 5.0 0.2 4.0 0.2 Features High collector to emitter voltage VCEO. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 300 V +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to emitter voltage VCEO 300 V 1.27 1.27 Emitt... See More ⇒
8.11. Size:1034K kexin
2sa1766.pdf
SMD Type Transistors PNP Transistors 2SA1766 1.70 0.1 Features Adoption of FBET, MBIT processes. High DC current gain (hFE=500 to 1200). Large current capacity. 0.42 0.1 0.46 0.1 Low collector-to-emitter saturation voltage. High VEBO. 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base ... See More ⇒
8.12. Size:1309K kexin
2sa1764.pdf
SMD Type Transistors PNP Transistors 2SA1764 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=-200mA 1 2 Collector Emitter Voltage VCEO=-15V +0.1 +0.05 0.95 -0.1 0.1 -0.01 Complementary to 2SC4453 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collect... See More ⇒
Detailed specifications: 2SA1706T-AN, 2SA1707S-AN, 2SA1707T-AN, 2SA1708S-AN, 2SA1708T-AN, 2SA1709S-AN, 2SA1709T-AN, 2SA1768S-AN, 8050, 2SA1770S-AN, 2SA1770T-AN, 2SA1774FRA, 2SA1774G, 2SA1774GP, 2SA1774-Q, 2SA1774-R, 2SA1774-S
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