2SA1770S-AN Datasheet and Replacement

Ordering number : EN3578A2SA1770/2SC4614Bipolar Transistorhttp://onsemi.com() () ( ) ( )160V, 1.5A, Low VCE sat , PNP NPN Single NMPFeatures Adoption of MBIT process High breakdown voltage and large current capacity( )2SA1770SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltage VCBO (--)180 VC

Ordering number:ENN3578PNP/NPN Epitaxial Planar Silicon Transistors2SA1770/2SC4614High-Voltage Switching ApplicationsFeatures Package Dimensions Adoption of MBIT process.unit:mm High breakdown voltage and large current capacity.2064A[2SA1770/2SC4614]2.51.456.9 1.00.60.9 0.51 2 30.451 : Emitter2 : Collector( ) : 2SA17703 : Base2.54 2.54Specificat

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2SA1774/DPNP Silicon General Purpose2SA1774Amplifier TransistorThis PNP transistor is designed for general purpose amplifier applications. Thisdevice is housed in the SOT416/SC90 package which is designed for low powerPNP GENERALsurface mount applications, where board space is at a premium.PURPOSE AMPLIFIER

Ordering number:EN3481PNP Epitaxial Planar Silicon Transistor2SA1778VHF Converter, Local Oscillator ApplicationsFeatures Package Dimensions High power gain (PG=13dB typ ; f=0.4GHz).unit:mm High cutoff frequency (fT=1.2GHz typ).2018A Low Cob (Cob=1.0pF typ).[2SA1778] Complementary pair with the 2SC4269.C : CollectorB : BaseE : EmitterSANYO : CPSpecific

TransistorsGeneral Purpose Transistor(*50V, *0.15A)2SA1037AK / 2SA1576A / 2SA1774 / 2SA933ASFFeatures FExternal dimensions (Units: mm)1) Excellent hFE linearity.2) Complements the 2SC2412K /2SC4081 / 2SC4617 / 2SC1740S.FStructureEpitaxial planar typePNP silicon transistor(96-89-A32)198Transistors 2SA1037AK/2SA1576A/2SA1774/2SA933ASFAbsolute maximum ratings (Ta = 25_

2SA1812 / 2SA1727 / 2SA1776TransistorsHigh-voltage Switching Transistor( 400V, 0.5A)2SA1812 / 2SA1727 / 2SA1776 Features1) High breakdown voltage, BVCEO= 400V.2) Low saturation voltage, typically VCE (sat) = 0.3V at IC / IB = 100mA / 10mA.3) High switching speed, typically tf : 1 s at IC = 100mA.4) Wide SOA (safe operating area). Absolute maximum ratings (Ta=25C)Paramete

General Purpose Transistor (50V, 0.15A) 2SA1037AK / 2SA1576A / 2SA1774 / 2SA2029 / 2SA933AS Features Dimensions (Unit : mm) 1) Excellent hFE linearity. 2SA1037AK 2SA1576A2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S. 1.251.62.1Structure 2.8Epitaxial planar type. PNP silicon transistor 0.1 to 0.40.3 to 0.6Each lead has same dime

2SA2029 / 2SA1774EB / 2SA17742SA1576UB / 2SA1576A / 2SA1037AKDatasheetGeneral Purpose Transistor (-50V, -150mA)lOutlinelParameter Value SOT-723 SOT-416FLVCEO-50VIC-150mA 2SA2029 2SA1774EB(VMT3) (EMT3F)lFeatures SOT-416 SOT-323FLl1) General Purpose. 2) Complementary:2SC5658/2SC4617EB2SA1774 2SA1576UB /2SC4617/2SC4081UB/2S

General Purpose Transistor (50V, 0.15A) 2SA1774EB Applications Dimensions (Unit : mm) General purpose small signal amplifier. EMT3FFeatures 1) Excellent hFE linearity. 1.6 0.72) Complements the 2SC4617EB. 0.26(3)Structure PNP silicon epitaxial. planar transistor. (1) (2)0.130.5 0.51.0Each lead has same dimensions(1) Base(2) Emitter Abbreviate

2SA2029 / 2SA1774EB / 2SA17742SA1576UB / 2SA1576U3 / 2SA1037AKDatasheetGeneral purpose Transistor (-50V, -150mA)lOutlinelParameter Value SOT-723 SOT-416FLVCEO-50VIC-150mA 2SA2029 2SA1774EB(VMT3) (EMT3F)lFeatures SOT-416 SOT-323FLl1)Excellent hFE linearity. 2)Complements the 2SC5658/2SC4617EB/2SA1774 2SA1576UB 2SC4617/2SC

2SA2029FHA / 2SA1774EB / 2SA1774FRA / 2SA1576UB / 2SA1576AFRA / 2SA1037AKFRA2SA2029 / 2SA1774EB / 2SA1774 / 2SA1576UB / 2SA1576A / 2SA1037AKDatasheetPNP -150mA -50V General Purpose TransistorsAEC-Q101 QualifiedOutline VMT3 EMT3FParameter ValueCollectorCollectorVCEO50VBaseBaseIC150mAEmitterEmitter2SA2029 2SA1774EB2SA2029FHA(SC-105AA) (SC-89)F

2SA1774-Q/2SA1774-R/2SA1774-SFeatures Halogen Free Available Upon Request By Adding Suffix "-HF" Moisture Sensitivity Level 1PNP Epoxy Meets UL 94 V-0 Flammability Rating Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSGeneral Purpose Compliant. See Ordering Information)TransistorMaximum Ratings @ 25C Unless Otherwise Specified Operating Junctio

MCC2SA1774-QMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components2SA1774-RCA 91311Phone: (818) 701-49332SA1774-SFax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates PNP SiliconRoHS Compliant. See ordering information) Small Package Epitaxial Transistor Mounting:any position Epoxy meet

MCC2SA1774-QMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components2SA1774-RCA 91311Phone: (818) 701-49332SA1774-SFax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates PNP SiliconRoHS Compliant. See ordering information) Small Package Epitaxial Transistor Mounting:any position Epoxy meet

MCC2SA1774-QMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components2SA1774-RCA 91311Phone: (818) 701-49332SA1774-SFax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates PNP SiliconRoHS Compliant. See ordering information) Small Package Epitaxial Transistor Mounting:any position Epoxy meet

2SA1774G, S2SA1774GPNP Silicon GeneralPurpose Amplifier TransistorThis PNP transistor is designed for general purpose amplifierapplications. This device is housed in the SC-75/SOT-416/SC-90package which is designed for low power surface mountwww.onsemi.comapplications, where board space is at a premium.Features Reduces Board Space High hFE, 210-460 (typical)SC-75

2SA1774G, S2SA1774GPNP Silicon GeneralPurpose Amplifier TransistorThis PNP transistor is designed for general purpose amplifierapplications. This device is housed in the SC-75/SOT-416/SC-90package which is designed for low power surface mounthttp://onsemi.comapplications, where board space is at a premium.Features Reduces Board Space High hFE, 210-460 (typical)SC-75

2SA1774G, S2SA1774GPNP Silicon GeneralPurpose Amplifier TransistorThis PNP transistor is designed for general purpose amplifierapplications. This device is housed in the SC-75/SOT-416/SC-90package which is designed for low power surface mounthttp://onsemi.comapplications, where board space is at a premium.Features Reduces Board Space High hFE, 210-460 (typical)SC-75

2SA1774G, S2SA1774GPNP Silicon GeneralPurpose Amplifier TransistorThis PNP transistor is designed for general purpose amplifierapplications. This device is housed in the SC-75/SOT-416/SC-90package which is designed for low power surface mounthttp://onsemi.comapplications, where board space is at a premium.Features Reduces Board Space High hFE, 210-460 (typical)SC-75

2SA1774PNP Silicon GeneralPurpose Amplifier TransistorThis PNP transistor is designed for general purpose amplifierapplications. This device is housed in the SC-75/SOT-416/SC-90package which is designed for low power surface mounthttp://onsemi.comapplications, where board space is at a premium.FeaturesCOLLECTOR Reduces Board Space 3 High hFE, 210-460 (typical) L

UNISONIC TECHNOLOGIES CO., LTD 2SA1774 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR FEATURES * Excellent hFE linearity * Complements the UTC 2SC4617 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SA1774L-x-AE3-R 2SA1774G-x-AE3-R SOT-23 E B C Tape Reel2SA1774L-x-AN3-R 2SA1774G-x-AN3-R SOT-523 E B C

2SA1774 -0.15A, -60V PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free FEATURES SOT-523 Low COB. COB=4.0pF Complements the 2SC4617 AM 33Top View C BCLASSIFICATION OF hFE 11 2L 2Product-Rank 2SA1774-Q 2SA1774-R 2SA1774-S KERange 120~270 180~390 270~560 DMarki

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate TransistorsSOT-523 2SA1774 TRANSISTOR (PNP)FEATURES Reduces Board Space High hFE1. BASE Low VCE(sat) 2. EMTTER3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -60 VVCEO Collector-Emitter Voltage -50 VVEBO Emitter-Base V

JMnic Product Specification Silicon PNP Power Transistors 2SA1771 DESCRIPTION With TO-220F package Low collector saturation voltage High speed switching time APPLICATIONS High current switching PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol 3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS MAX U

2SA1774SOT-523 Transistor(PNP)SOT-5231. BASE 2. EMTTER 3. COLLECTOR Features Reduces Board Space High hFE 120560 Low VCE(sat)

2SA1774PNP 3312SC-89(SOT-523F)WEITRONhttp://www.weitron.com.tw2SA1774ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)CharacteristicsSymbol Min Typ Max UnitON CHARACTERISTICSDC Current Gain--hFE 120560(IC=-1 mAdc, VCE=-6.0 Vdc)Collector-Emitter Saturation VoltageVCE(sat) - Vdc- -0.5 (IC=-50 mAdc, IB=-5mAdc)Output Capacitanc

SMD Type TransistorsPNP Transistors2SA1778SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=-50mA Collector Emitter Voltage VCEO=-15V1 2+0.10.95-0.1 0.1+0.05-0.01 Complementary to 2SC4269+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector

SMD Type TransistorsPNP Transistors2SA1774SOT-523 U nit: m m+0.11.6 -0.1+0.11.0 -0.1+0.050.2 -0.05 0.150.05 Features2 1 Reduces Board Space High hFE Low VCE(sat)30.30.050.5+0.1-0.11. Base2. Emitter3. Collecter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - E

CHENMKO ENTERPRISE CO.,LTD2SA1774GPSURFACE MOUNT General Purpose PNP Transistor VOLTAGE 50 Volts CURRENT 0.15 AmpereAPPLICATION* Small Power Amplifier .FEATURESC-75/SOT-416* Surface mount package. (SC-75/SOT-416)* Low saturation voltage VCE(sat)=-0.5V(max.)(IC=-50mA) * Low cob. Cob=4.0pF(Typ.)* PC= 150mW (Collector power dissipation).0.10.20.050.51.00.1 1.6

2SA1774 2SA1774Q / 2SA1774R / 2SA1774S SOT-523 Silicon General Purpose Transistor (PNP) General description SOT-523 Silicon General Purpose Transistor (PNP) FEATURES Low Cob = 3.5pF (Typical) Low Vce(sat)

isc Silicon PNP Power Transistor 2SA1771DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOLow Collector Saturation Voltage-: V = -0.4V(Max)@ I = -6ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P

isc Silicon PNP Power Transistor 2SA1773DESCRIPTIONHigh breakdown voltage:V >-400V @I =-1mA(BR)CEO CLarge current capacityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -400 VCBO