2SA2013-TD-E Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SA2013-TD-E
SMD Transistor Code: AT
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 1.3 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 360 MHz
Collector Capacitance (Cc): 24 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: SOT89
2SA2013-TD-E Transistor Equivalent Substitute - Cross-Reference Search
2SA2013-TD-E Datasheet (PDF)
2sa2013 2sc5566.pdf
Ordering number:ENN6307APNP/NPN Epitaxial Planar Silicon Transistors2SA2013/2SC5566DC/DC Converter ApplicationsApplications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit:mm2038AFeatures [2SA2013/2SC5566]4.5 Adoption of FBET and MBIT processes.1.51.6 High current capacitance. Low collector-to-emitter saturation voltage. Hi
2sa2013 2sc5566.pdf
Ordering number : ENN6307B2SA2013 / 2SC5566PNP / NPN Epitaxial Planar Silicon Transistors2SA2013 / 2SC5566DC / DC Converter ApplicationsApplications Relay drivers, lamp drivers, motor drivers, flash.Features Adoption of FBET and MBIT processes. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall packag
2sa2013 2sc5566.pdf
Ordering number : EN6307C2SA2013/2SC5566Bipolar Transistorhttp://onsemi.com(-)50V, (-)4A, Low VCE(sat), (PNP)NPN Single PCPApplicaitons Relay drivers, lamp drivers, motor drivers, flashFeatures Adoption of FBET and MBIT processes Large current capacity Low collector-to-emitter saturation voltage High-speed switching Ultrasmall package facilitales mini
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2SB202
