2SA2088FRA Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SA2088FRA
SMD Transistor Code: VM
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 400 MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: SOT323
2SA2088FRA Transistor Equivalent Substitute - Cross-Reference Search
2SA2088FRA Datasheet (PDF)
2sa2088fra.pdf
AEC-Q101 QualifiedMedium power transistor (60V, 0.5A)2SA2088FRAFeatures Dimensions (Unit : mm)1) High speed switching. (Tf : Typ. : 60ns at IC = 500mA)UMT32) Low saturation voltage, typically 150mV at IC = 100mA, IB = 10mA): (Typ. 2.0 0.93) Strong discharge power for inductive load and capacitance load. 0.3 0.2 0.74) Complements the 2SC5876 2S
2sa2088.pdf
2SA2088DatasheetMedium power transistor (-60V, -0.5A)lOutlinelParameter Value UMT3VCEO-60VIC-0.5ASOT-323SC-70 lFeaturesl1)High speed switching.lInner circuitl (Tf:Typ.:60ns at IC=-500mA)2)Low saturation voltage, typically (Typ.:-150mV at IC=-100mA, IB=-10mA)3)Strong discharge pow
2sa2081.pdf
To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM
2sa2080.pdf
To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM
2sa2089s.pdf
2SA2089S Transistors Medium power transistor (-60V, -0.5A) 2SA2089S External dimensions (Unit : mm) Features 1) High speed switching. SPT 4.0 2.0(Tf : Typ. : 60ns at IC = -500mA) (SC-72)2) Low saturation voltage, typically :(Typ. -150mV at IC = -100mA, IB = -10mA) 0.453) Strong discharge power for inductive load and 2.50.5 0.45capacitance load. 5.0(1) Emitt
2sa2086s.pdf
2SA2086S Transistors Medium power transistor (-30V, -1A) 2SA2086S External dimensions (Unit : mm) Features 1) High speed switching. (Tf : Typ. : 20ns at IC = -1A) 4.0 2.0SPT2) Low saturation voltage, typically :(Typ. -150mV at IC = -1.0A, IB = -100mA) 3) Strong discharge power for inductive load and 0.45capacitance load. 2.50.5 0.454) Complements the 2SC5874S 5
2sa2087.pdf
2SA2087 Transistors Power transistor (-30V, -2A) 2SA2087 External dimensions (Unit : mm) Features 1) High speed switching. (Tf : Typ. : 20ns at IC = -2A) ATV2.56.82) Low saturation voltage, typically :(Typ. -200mV at IC = -1.0A, IB = -100mA) 3) Strong discharge power for inductive load and 0.65Max.capacitance load. 0.5(1) (2) (3)4) Complements the 2SC5875 2
2sa2084.pdf
Transistors2SA2084Silicon PNP epitaxial planar typeUnit: mmFor general amplification0.40+0.100.050.16+0.100.063 Features High collector-emitter voltage (Base open) VCEO Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing1 2(0.95) (0.95) Absolute Maximum Ratings Ta = 25C1.90.12.90+0.20
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP35C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
