2SA2223A
Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SA2223A
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 160
W
Maximum Collector-Base Voltage |Vcb|: 260
V
Maximum Collector-Emitter Voltage |Vce|: 260
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 15
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 35
MHz
Collector Capacitance (Cc): 500
pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package:
TO3P
2SA2223A
Transistor Equivalent Substitute - Cross-Reference Search
2SA2223A
Datasheet (PDF)
..1. Size:228K sanken-ele
2sa2223a.pdf 

2SA2223AAudio Amplification TransistorFeatures and Benefits Description LAPT (High frequency multi emitter transistor) Sanken LAPT transistors have an innovative design, produced Small package (TO-3P) by adapting advancements in the unique Sanken thin-wafer High power handling capacity, 160 W production technology. These PNP power transistors achieve Improved sound ou
..2. Size:216K inchange semiconductor
2sa2223a.pdf 

isc Silicon PNP Power Transistor 2SA2223ADESCRIPTIONHigh frequency multi emitter transistorSmall package(TO-3P)High power handling capacity ,160WComplement to Type 2SC6145AMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSSignal transistors for audio amplifiersAudio marketABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL P
7.1. Size:228K sanken-ele
2sa2223.pdf 

2SA2223Audio Amplification TransistorFeatures and Benefits Description LAPT (High frequency multi emitter transistor) Sanken LAPT transistors have an innovative design, produced Small package (TO-3P) by adapting advancements in the unique Sanken thin-wafer High power handling capacity, 160 W production technology. These PNP power transistors achieve Improved sound out
7.2. Size:191K inchange semiconductor
2sa2223.pdf 

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA2223DESCRIPTIONHigh frequency multi emitter transistorSmall package(TO-3P)High power handling capacity ,160WComplement to Type 2SC6145Minimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSSignal transistors for audio amplifiersAudio marketABSOLUTE MAXIMUM RATIN
8.1. Size:165K toshiba
2sa2220.pdf 

2SA2220 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2220 Audio Frequency Amplifier Applications Unit: mm High collector voltage : VCEO = 160 V Small collector output capacitance : Cob = 17 pF (typ.) High transition frequency : fT = 100 MHz (typ.) Complementary to 2SC6140 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCol
8.2. Size:298K sanyo
2sa2222sg.pdf 

2SA2222SGOrdering number : ENA1799SANYO SemiconductorsDATA SHEETPNP Epitaxial Planar Silicon Transistor2SA2222SGHigh-Current Switching ApplicationsApplications Relay drivers, lamp drivers, motor driversFeatures Adoption of MBIT process Large current capacitance (IC=--10A) Low collector-to-emitter saturation voltage (VCE(sat)=--250mV(typ.)) High-speed swi
8.3. Size:69K sanyo
2sa2222.pdf 

Ordering number : ENA1148 2SA2222SANYO SemiconductorsDATA SHEETPNP Epitaxial Planar Silicon Transistor2SA2222High-Current Switching ApplicationsApplications Relay drivers, lamp drivers, motor drivers.Features Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching.SpecificationsAbsolute Max
8.4. Size:239K onsemi
2sa2222sg.pdf 

Ordering number : ENA1799B2SA2222SGBipolar Transistorhttp://onsemi.com ( )50V, 10A, Low VCE sat PNP TO-220F-3FSApplications Relay drivers, lamp drivers, motor driversFeatures Adoption of MBIT process Large current capacity (IC=--10A) Low collector-to-emitter saturation voltage (VCE(sat)=--250mV(typ.)) High-speed switching (tf=22ns(typ.))Specifica
8.5. Size:167K inchange semiconductor
2sa2222sg.pdf 

isc Silicon PNP Power Transistor 2SA2222SGDESCRIPTIONLarge current capacitanceHigh-speed switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSrelay drivers,lamp drivers,motor driversABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -50 VCBOV Collector-
8.6. Size:211K inchange semiconductor
2sa2222.pdf 

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA2222DESCRIPTIONLarge current capacitanceHigh speed switchingLow saturation voltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSRelay drivers,lamp drivers,motor driversABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -
8.7. Size:211K inchange semiconductor
2sa2222 .pdf 

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA2222DESCRIPTIONLarge current capacitanceHigh speed switchingLow saturation voltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSRelay drivers,lamp drivers,motor driversABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -
Datasheet: 2SA1771
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, 2SA1792
, 2SA1793
, 2SA1794
, 2SA1795
, BC557
, 2SA1799
, 2SA17H
, 2SA18
, 2SA180
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, 2SA1800O
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, 2SA1800Y
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