2SA562-O Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SA562-O
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 35 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 13 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: TO92
2SA562-O Transistor Equivalent Substitute - Cross-Reference Search
2SA562-O Datasheet (PDF)
1.1. 2sa562-o.pdf 
Size:239K _update
MCC TM Micro Commercial Components 2SA562-O 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SA562-Y Phone: (818) 701-4933 Fax: (818) 701-4939 Features Excellent hFE) Linearlity Epoxy meets UL 94 V-0 flammability rating PNP Silicon Moisure Sensitivity Level 1 Lead Free Finish/RoHS Compliant ("P" Suffix designates Transistors RoHS Compliant. See o
3.1. 2sa562-y.pdf Size:239K _update
MCC TM Micro Commercial Components 2SA562-O 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SA562-Y Phone: (818) 701-4933 Fax: (818) 701-4939 Features Excellent hFE) Linearlity Epoxy meets UL 94 V-0 flammability rating PNP Silicon Moisure Sensitivity Level 1 Lead Free Finish/RoHS Compliant ("P" Suffix designates Transistors RoHS Compliant. See o
4.1. 2sa562tm.pdf Size:201K _toshiba
2SA562TM TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA562TM Audio Frequency Low Power Amplifier Applications Unit: mm Driver Stage Amplifier Applications Switching Applications Excellent hFE linearity: hFE (2) = 25 (min) at V = -6 V, I = -400 mA CE C 1 watt amplifier application. Complementary to 2SC1959. Maximum Ratings (Ta = = 25C) = = Charac
4.2. 2sa562.pdf Size:1015K _no
4.3. 2sa562.pdf Size:206K _secos
2SA562 -0.5A, -35V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES ? Excellent hFE Linearity Millimeter REF. Min. Max. CLASSIFICATION OF hFE A 4.40 4.70 B 4.30 4.70 C 12.70 - Product-Rank 2SA562-O 2SA562-Y D 3.30 3.81 E 0.36 0.56 F 0.36 0.51 Range 70~140 120~240 G 1
4.4. 2sa562.pdf Size:308K _lge
2SA562(PNP) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Excellent hFE linearlity Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -500 mA P
4.5. 2sa562m.pdf Size:464K _blue-rocket-elect
2SA562M(BR3CG562M) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a SOT-23 Plastic Package. 特征 / Features 极好的 h 特性,与 2SC1959M(3DG1959M)互补。 FE Excellent hFE linearity, complementary pair with 2SC1959M(3DG1959M). 用途 / Applications 用于音频小功率放大，激励级放大及开
Datasheet: 2SA2169-TL-E , 2SA2186-AN , 2SA2188 , 2SA2205-E , 2SA2205-TL-E , 2SA2210-1E , 2SA2223 , 2SA2223A , AC128 , 2SA562-Y , 2SB1201S-E , 2SB1201S-TL-E , 2SB1201T-E , 2SB1201T-TL-E , 2SB1203S-E , 2SB1644J , 2SB1203S-TL-E .
LIST
Last Update
BJT: LUMG3NT1G | LUMG2NT1G | LUMG10NT1G | LUMF23NDW1T1G | LUMC3NT1G | LUMA5NT1G | LRX102UT1G | LMUN5237T1G | LMUN5237DW1T1G | LMUN5236DW1T1G | LMUN5235T1G | LMUN5235DW1T1G | LMUN5234T1G | LMUN5234DW1T1G | LMUN5233T1G | LMUN5233DW1T1G | LMUN5232T1G | LMUN5232DW1T1G | LMUN5231T1G | LMUN5231DW1T1G |