All Transistors. 2SA562-O Datasheet

 

2SA562-O Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SA562-O

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.5 W

Maximum Collector-Base Voltage |Vcb|: 35 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 200 MHz

Collector Capacitance (Cc): 13 pF

Forward Current Transfer Ratio (hFE), MIN: 70

Noise Figure, dB: -

Package: TO92

2SA562-O Transistor Equivalent Substitute - Cross-Reference Search

 

2SA562-O Datasheet (PDF)

1.1. 2sa562-o.pdf Size:239K _update

2SA562-O
2SA562-O

MCC TM Micro Commercial Components 2SA562-O 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SA562-Y Phone: (818) 701-4933 Fax: (818) 701-4939 Features Excellent hFE) Linearlity Epoxy meets UL 94 V-0 flammability rating PNP Silicon Moisure Sensitivity Level 1 Lead Free Finish/RoHS Compliant ("P" Suffix designates Transistors RoHS Compliant. See o

3.1. 2sa562-y.pdf Size:239K _update

2SA562-O
2SA562-O

MCC TM Micro Commercial Components 2SA562-O 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SA562-Y Phone: (818) 701-4933 Fax: (818) 701-4939 Features Excellent hFE) Linearlity Epoxy meets UL 94 V-0 flammability rating PNP Silicon Moisure Sensitivity Level 1 Lead Free Finish/RoHS Compliant ("P" Suffix designates Transistors RoHS Compliant. See o

4.1. 2sa562tm.pdf Size:201K _toshiba

2SA562-O
2SA562-O

2SA562TM TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA562TM Audio Frequency Low Power Amplifier Applications Unit: mm Driver Stage Amplifier Applications Switching Applications Excellent hFE linearity: hFE (2) = 25 (min) at V = -6 V, I = -400 mA CE C 1 watt amplifier application. Complementary to 2SC1959. Maximum Ratings (Ta = = 25C) = = Charac

4.2. 2sa562.pdf Size:1015K _no

2SA562-O
2SA562-O

4.3. 2sa562.pdf Size:206K _secos

2SA562-O
2SA562-O

2SA562 -0.5A, -35V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES ? Excellent hFE Linearity Millimeter REF. Min. Max. CLASSIFICATION OF hFE A 4.40 4.70 B 4.30 4.70 C 12.70 - Product-Rank 2SA562-O 2SA562-Y D 3.30 3.81 E 0.36 0.56 F 0.36 0.51 Range 70~140 120~240 G 1

4.4. 2sa562.pdf Size:308K _lge

2SA562-O
2SA562-O

2SA562(PNP) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Excellent hFE linearlity Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -500 mA P

4.5. 2sa562m.pdf Size:464K _blue-rocket-elect

2SA562-O
2SA562-O

2SA562M(BR3CG562M) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a SOT-23 Plastic Package. 特征 / Features 极好的 h 特性,与 2SC1959M(3DG1959M)互补。 FE Excellent hFE linearity, complementary pair with 2SC1959M(3DG1959M). 用途 / Applications 用于音频小功率放大,激励级放大及开

Datasheet: 2SA2169-TL-E , 2SA2186-AN , 2SA2188 , 2SA2205-E , 2SA2205-TL-E , 2SA2210-1E , 2SA2223 , 2SA2223A , AC128 , 2SA562-Y , 2SB1201S-E , 2SB1201S-TL-E , 2SB1201T-E , 2SB1201T-TL-E , 2SB1203S-E , 2SB1644J , 2SB1203S-TL-E .

 


2SA562-O
  2SA562-O
  2SA562-O
 

social 

LIST

Last Update

BJT: M54561P | M54532P | M54532FP | M54531WP | M54531P | M54531FP | M54530P | M54530FP | M54522WP | LBCW65ALT1G | LBC858CWT1G | LBC848AWT1G | LBC847CPDW1T1G | LBC846ADW1T1G | LBC817-40DPMT1G | LBC817-40DMT1G | LBC817-25DMT1G | LBC817-16DPMT1G | LBC817-16DMT1G | LBC807-40DMT1G |