2SA562-Y Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SA562-Y
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 35 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 13 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: TO92
2SA562-Y Transistor Equivalent Substitute - Cross-Reference Search
2SA562-Y Datasheet (PDF)
2sa562-y.pdf
MCCTM Micro Commercial Components2SA562-O20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SA562-YPhone: (818) 701-4933Fax: (818) 701-4939Features Excellent hFE) Linearlity Epoxy meets UL 94 V-0 flammability ratingPNP Silicon Moisure Sensitivity Level 1 Lead Free Finish/RoHS Compliant ("P" Suffix designates TransistorsRoHS Compliant. See o
2sa562-o.pdf
MCCTM Micro Commercial Components2SA562-O20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SA562-YPhone: (818) 701-4933Fax: (818) 701-4939Features Excellent hFE) Linearlity Epoxy meets UL 94 V-0 flammability ratingPNP Silicon Moisure Sensitivity Level 1 Lead Free Finish/RoHS Compliant ("P" Suffix designates TransistorsRoHS Compliant. See o
2sa562tm.pdf
2SA562TM TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA562TM Audio Frequency Low Power Amplifier Applications Unit: mm Driver Stage Amplifier Applications Switching Applications Excellent hFE linearity: hFE (2) = 25 (min) at V = -6 V, I = -400 mA CE C 1 watt amplifier application. Complementary to 2SC1959. Maximum Ratings (Ta == 25C) =
2sa562.pdf
2SA562 -0.5A, -35V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES Excellent hFE Linearity MillimeterREF.Min. Max.CLASSIFICATION OF hFE A 4.40 4.70B 4.30 4.70C 12.70 -Product-Rank 2SA562-O 2SA562-YD 3.30 3.81E 0.36 0.56F 0.36 0.51Range 70~140 120~240
2sa562.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate TransistorsTO-92 2SA562 TRANSISTOR (PNP)1. EMITTER FEATURESExcellent hFE inearlity 2. COLLECTOR3. BASE Equivalent Circuit A562=Device code Solid dot=Green molding compound device, Z if none,the normal deviceZ=Rank of hFE 1XXX=Code
2sa562.pdf
2SA562(PNP) TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Excellent hFE linearlity Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -500 m
2sa562m.pdf
2SA562M(BR3CG562M) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features h , 2SC1959M(3DG1959M) FEExcellent hFE linearity, complementary pair with 2SC1959M(3DG1959M). / Applications
2sa562o 2sa562y.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA562DESCRIPTIONLow Saturation VoltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-speed switching and Amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)a
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
