All Transistors. 2SB1205T-TL-E Datasheet

 

2SB1205T-TL-E Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SB1205T-TL-E
   SMD Transistor Code: B1205
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 25 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 320 MHz
   Collector Capacitance (Cc): 60 pF
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: TO252

 2SB1205T-TL-E Transistor Equivalent Substitute - Cross-Reference Search

   

2SB1205T-TL-E Datasheet (PDF)

 6.1. Size:283K  onsemi
2sb1205s 2sb1205t.pdf

2SB1205T-TL-E
2SB1205T-TL-E

Ordering number : EN2114C2SB1205Bipolar Transistorhttp://onsemi.com ( )20V, 5A, Low VCE sat , PNP Single TP/TP-FAApplications Flash, voltage regulators, relay drivers, lamp driversFeatures Adoption of FBET, MBIT processes Low saturation voltage Fast switching speed Large current capacity Small and slim package making it easy to make 2SB1205-a

 7.1. Size:50K  sanyo
2sb1205.pdf

2SB1205T-TL-E
2SB1205T-TL-E

Ordering number:ENN2114BPNP Epitaxial Planar Silicon Transistor2SB1205Strobe High-Current Switching ApplicationsApplications Package Dimensions Strobe, voltage regulators, relay drivers, lampunit:mmdrivers.2045B[2SB1205]Features 6.52.35.00.5 Adoption of FBET, MBIT processes. 4 Low saturation voltage. Fast switching speed. Large current capacity.

 7.2. Size:368K  onsemi
2sb1205.pdf

2SB1205T-TL-E
2SB1205T-TL-E

Ordering number : EN2114C2SB1205Bipolar Transistorhttp://onsemi.com ( )20V, 5A, Low VCE sat , PNP Single TP/TP-FAApplications Flash, voltage regulators, relay drivers, lamp driversFeatures Adoption of FBET, MBIT processes Low saturation voltage Fast switching speed Large current capacity Small and slim package making it easy to make 2SB1205-a

 7.3. Size:1261K  kexin
2sb1205.pdf

2SB1205T-TL-E
2SB1205T-TL-E

SMD Type TransistorsPNP Transistors2SB1205TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features Low collector-to-emitter saturation voltage. High current and high fT0.127 Fast switching time.+0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154.60 -0.152 Collector3 Emitter Absolute Maximum Ratings Ta = 25

 7.4. Size:253K  inchange semiconductor
2sb1205.pdf

2SB1205T-TL-E
2SB1205T-TL-E

isc Silicon PNP Power Transistor 2SB1205DESCRIPTIONLarge current capacityLow collector-to-emitter saturation voltageFast switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSStrobe,voltage regulations,relay drivers,lamp driversABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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