All Transistors. 2SB1216T-H Datasheet

 

2SB1216T-H Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SB1216T-H

Marking Code: B1216

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 120 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 130 MHz

Collector Capacitance (Cc): 65 pF

Forward Current Transfer Ratio (hFE), MIN: 200

Noise Figure, dB: -

Package: TO251

2SB1216T-H Transistor Equivalent Substitute - Cross-Reference Search

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Datasheet: 2SB1204T-TL-E , 2SB1205S-TL-E , 2SB1205T-TL-E , 2SB1216S-E , 2SB1216S-H , 2SB1216S-TL-E , 2SB1216S-TL-H , 2SB1216T-E , 2N222 , 2SB1216T-TL-E , 2SB1216T-TL-H , 2SB1260-P , 2SB1260-Q , 2SB1260-R , 2SB1302S-TD-E , 2SB1302T-TD-E , 2SB1308-P .

 


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