2SB1260-P Datasheet, Equivalent, Cross Reference Search

SMD Type TransistorsPower Transistor2SB1260FeaturesHigh breakdown voltage and highcurrent.BVCEO=-80V, IC=-1AGood hFE linearity.Low VCE(sat).Epitaxial planar typePNP silicon transistorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -80 VCollector-emitter voltage VCEO -80 VEmitter-base voltage VEBO -5 VCollector current IC -1 A

SMD Type TransistorsPower Transistor2SB1260FeaturesHigh breakdown voltage and highcurrent.BVCEO=-80V, IC=-1AGood hFE linearity.Low VCE(sat).Epitaxial planar typePNP silicon transistorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -80 VCollector-emitter voltage VCEO -80 VEmitter-base voltage VEBO -5 VCollector current IC -1 A

SMD Type TransistorsPower Transistor2SB1260FeaturesHigh breakdown voltage and highcurrent.BVCEO=-80V, IC=-1AGood hFE linearity.Low VCE(sat).Epitaxial planar typePNP silicon transistorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -80 VCollector-emitter voltage VCEO -80 VEmitter-base voltage VEBO -5 VCollector current IC -1 A

Power Transistor (80V, 1A) 2SB1260 / 2SB1181 / 2SB1241 Features Dimensions (Unit : mm) 1) Hight breakdown voltage and high current. 2SB1260 2SB1181BVCEO=80V, IC = 1A 2.3+0.26.50.22) Good hFE linearty. C0.55.1+0.23) Low VCE(sat). 0.50.14.5+0.21.5Complements the 2SD1898 / 2SD1863 / 2SD1733. 1.60.10.650.1 0.75(1) (2) (3)0.90

Power Transistor (-80V, -1A) 2SB1260 / 2SB1181 Features Dimensions (Unit : mm) 1) Hight breakdown voltage and high current. 2SB1260 2SB1181BVCEO= -80V, IC = -1A 2.3+0.26.50.22) Good hFE linearty. C0.55.1+0.20.50.13) Low VCE(sat). 4.5+0.21.54) Complements the 2SD1898 / 2SD1733. 1.60.10.650.10.75(1) (2) (3)0.90.4+0.10.550.10.40.1 0.5

2SB1260 / 2SB1181Datasheet PNP -1.0A -80V Middle Power TransistorlOutlineCollector MPT3 CPT3Parameter ValueVCEO-80VBase Collector IC-1.0AEmitter Base Emitter 2SB1260 2SB1181 lFeatures(SC-62) (SC-63) 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SD1898 / 2SD17333) Low VCE(sat)VCE(sat)= -0.4V Max. (IC/IB= -500mA/

UNISONIC TECHNOLOGIES CO., LTD 2SB1260 PNP SILICON TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. * BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) ORDERING INFORMATION Pin Assignment Ordering Number Package Packing 1 2 32SB1260G-x-A

2SB1260 -1 A, -80 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 FEATURES 4 High breakdown voltage and high current BVCEO=-80V, IC=-1A 1 Good hFE linearity 23B C A Complements to 2SD1898 E ECPACKAGE INFORMATION B DWeight: 0.05 g (approximately) F G

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SB1260 TRANSISTOR (PNP) 1. BASE FEATURES 2. COLLECTOR Power Transistor High Voltage and Current 3. EMITTER Low Collector-emitter saturation voltage Complements the 2SD1898 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Coll

2SB1 260TRANSISTOR(PNP) SOT-89-3L 1. BASE FEATURES 2. COLLECTOR Power Transistor High Voltage and Current 3. EMITTER Low Collector-emitter saturation voltage Complements the 2SD1898 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V

2SB1260PNP Plastic-Encapsulate TransistorSOT-89121. BASE32. COLLECTOR3. EMITTERABSOLUTE MAXIMUM RATINGS(Ta=25%C)Rating UnitSymbolValue-80VdcCollector-Emitter VoltageVCEOVdcCollector-Base Voltage -80VCBOEmitter-Base Voltage VEBO -5.0 VdcIAdc(DC)C1.0Collector CurrentI2.0 Adc (Pulse)CPPCCollector Power Dissipation 0.5 WTj , Tstg %CJun

FM120-M WILLAS2SB1260 THRUSOT-89 Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offersTRANSISTOR (PNP) better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted applicati

SMD Type TransistorsPNP Transistors2SB12601.70 0.1 Features Hight breakdown voltage and high current. Low collector-emitter saturation voltage VCE(sat) Good hFE linearty.0.42 0.10.46 0.1 Complementary to 2SD18981.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -80 Colle

Plastic-Encapsulate TransistorsFEATURES2SB1260(PNP) High breakdown voltage and high current. BVCEO=-80V,IC=-1A Good hFEVLinearity. Low VCE(sat). Complements the 2SD1898.Marking: ZLMaximum Ratings (Ta=25 unless otherwise noted)1. BASEParameter Symbol Value Unit2. COLLECTO SOT-89Collector-Base Voltage VCBO -80 V3. EMITTERCollector-Emitter Voltage VCEO -80 V