All Transistors. 2SC2120-O Datasheet

 

2SC2120-O Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SC2120-O
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.6 W
   Maximum Collector-Base Voltage |Vcb|: 35 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 13 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: TO92

 2SC2120-O Transistor Equivalent Substitute - Cross-Reference Search

   

2SC2120-O Datasheet (PDF)

 ..1. Size:255K  mcc
2sc2120-o.pdf

2SC2120-O
2SC2120-O

MCCTM Micro Commercial Components2SC2120-O20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SC2120-YPhone: (818) 701-4933Fax: (818) 701-4939Features Complementary Pair With 2SA950 Epoxy meets UL 94 V-0 flammability ratingNPN Silicon Moisure Sensitivity Level 1 Lead Free Finish/RoHS Compliant ("P" Suffix designates TransistorsRoHS Compliant

 6.1. Size:255K  mcc
2sc2120-y.pdf

2SC2120-O
2SC2120-O

MCCTM Micro Commercial Components2SC2120-O20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SC2120-YPhone: (818) 701-4933Fax: (818) 701-4939Features Complementary Pair With 2SA950 Epoxy meets UL 94 V-0 flammability ratingNPN Silicon Moisure Sensitivity Level 1 Lead Free Finish/RoHS Compliant ("P" Suffix designates TransistorsRoHS Compliant

 7.1. Size:197K  toshiba
2sc2120.pdf

2SC2120-O
2SC2120-O

2SC2120 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2120 Audio Power Amplifier Applications Unit: mm High hFE: h = 100~320 FE (1) 1 watts amplifier applications. Complementary to 2SA950 Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 35 VCollector-emitter voltage VCEO 30 VEmitter-base vo

 7.2. Size:129K  secos
2sc2120.pdf

2SC2120-O
2SC2120-O

2SC2120 0.8 A , 35 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES High DC Current Gain G H Complementary to 2SA950 1Emitter 1112Collector 222333J 3Base CLASSIFICATION OF hFE A DMillimeter REF. Product-Rank 2SC2120-O 2SC2120-Y Min. Max

 7.3. Size:549K  jiangsu
2sc2120.pdf

2SC2120-O
2SC2120-O

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors2SC2120 TRANSISTOR (NPN)TO 92 FEATURES 1. EMITTER High DC Current Gain Complementary to 2SA950 2. COLLECTOR3. BASE Equivalent Circuit C2120=Device code C2120 Solid dot=Green molding compound device, XXX if none,the normal deviceXXX=Code 1ORDERING INFORMATION Pa

 7.4. Size:190K  inchange semiconductor
2sc2120.pdf

2SC2120-O
2SC2120-O

isc Silicon NPN Transistor 2SC2120DESCRIPTIONHigh hFE(1)=100-3201 Watts Amplifier ApplicationsComplement to Type 2SA950Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio power amplifier ApplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 35 VCBOV Collector-Emitter

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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