2SC2655-O PDF and Equivalents Search

 

2SC2655-O Specs and Replacement

Type Designator: 2SC2655-O

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.9 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 30 pF

Forward Current Transfer Ratio (hFE), MIN: 70

Noise Figure, dB: -

Package: TO92MOD

 2SC2655-O Substitution

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2SC2655-O datasheet

 ..1. Size:405K  mcc

2sc2655-o.pdf pdf_icon

2SC2655-O

MCC Micro Commercial Components TM 2SC2655-O 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC2655-Y Phone (818) 701-4933 Fax (818) 701-4939 Features Halogen free available upon request by adding suffix "-HF" Collector of 0.9Watts of Power Dissipation. NPN Collector-current 2.0A Plastic-Encapsulate Operating and storage junction temperat... See More ⇒

 6.1. Size:405K  mcc

2sc2655-y.pdf pdf_icon

2SC2655-O

MCC Micro Commercial Components TM 2SC2655-O 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC2655-Y Phone (818) 701-4933 Fax (818) 701-4939 Features Halogen free available upon request by adding suffix "-HF" Collector of 0.9Watts of Power Dissipation. NPN Collector-current 2.0A Plastic-Encapsulate Operating and storage junction temperat... See More ⇒

 7.1. Size:167K  toshiba

2sc2655o 2sc2655y.pdf pdf_icon

2SC2655-O

2SC2655 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2655 Industrial Applications Power Amplifier Applications Unit mm Power Switching Applications Low saturation voltage VCE (sat) = 0.5 V (max) (IC = 1 A) High collector power dissipation PC = 900 mW High-speed switching tstg = 1.0 s (typ.) Complementary to 2SA1020. Absolute Maximum ... See More ⇒

 7.2. Size:148K  toshiba

2sc2655.pdf pdf_icon

2SC2655-O

2SC2655 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2655 Industrial Applications Power Amplifier Applications Unit mm Power Switching Applications Low saturation voltage VCE (sat) = 0.5 V (max) (IC = 1 A) High collector power dissipation PC = 900 mW High-speed switching tstg = 1.0 s (typ.) Complementary to 2SA1020. Absolute Maximum ... See More ⇒

Detailed specifications: 2SC2458-GR, 2SC2458-Y, 2SC2482-O, 2SC2482-Y, 2SC2510A, 2SC2625B, 2SC2655L-O, 2SC2655L-Y, 2SC2383, 2SC2655-Y, 2SC2668-O, 2SC2668-R, 2SC2668-Y, 2SC2712-BL, 2SC2712-GR, 2SC2712LT1, 2SC2712-O

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