2SC2983-O
Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC2983-O
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 15
W
Maximum Collector-Base Voltage |Vcb|: 160
V
Maximum Collector-Emitter Voltage |Vce|: 160
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 1.5
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 100
MHz
Collector Capacitance (Cc): 25
pF
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package:
TO252
2SC2983-O
Transistor Equivalent Substitute - Cross-Reference Search
2SC2983-O
Datasheet (PDF)
..1. Size:566K mcc
2sc2983-o.pdf
2SC2983-OMCCTMMicro Commercial Components20736 Marilla Street ChatsworthMicro Commercial Components2SC2983-YCA 91311Phone: (818) 701-4933Fax: (818) 701-4939FeaturesNPN Low Collector Saturation VoltagePlastic-Encapsulate Execllent current-to-gain characteristics Epoxy meets UL 94 V-0 flammability ratingTransistors Moisture Sensitivity Level 1
6.1. Size:566K mcc
2sc2983-y.pdf
2SC2983-OMCCTMMicro Commercial Components20736 Marilla Street ChatsworthMicro Commercial Components2SC2983-YCA 91311Phone: (818) 701-4933Fax: (818) 701-4939FeaturesNPN Low Collector Saturation VoltagePlastic-Encapsulate Execllent current-to-gain characteristics Epoxy meets UL 94 V-0 flammability ratingTransistors Moisture Sensitivity Level 1
7.1. Size:128K toshiba
2sc2983.pdf
2SC2983 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2983 Power Amplifier Applications Unit: mm Driver Stage Amplifier Applications High transition frequency: fT = 100 MHz (typ.) Complementary to 2SA1225 Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 160 VCollector-emitter voltage VCEO 160 VEmitter-ba
7.2. Size:872K jiangsu
2sc2983.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors 2SC2983 TRANSISTOR (NPN) TO-252-2L FEATURES 1. BASE High Transition Frequency 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage
7.3. Size:252K inchange semiconductor
2sc2983.pdf
isc Silicon NPN Power Transistor 2SC2983DESCRIPTIONExcellent linearity of hFELow collector-to-emitter saturation voltageFast switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier and driver stage amplifierapplications .ABSOLUTE MAXIMUM RATINGS(T =25)a
Datasheet: 2SA1801
, 2SA1802
, 2SA1802A
, 2SA1803
, 2SA1803O
, 2SA1803R
, 2SA1804
, 2SA1804O
, TIP35C
, 2SA1805
, 2SA1805O
, 2SA1805R
, 2SA1806
, 2SA181
, 2SA1810
, 2SA1810B
, 2SA1810C
.