2SC3519B Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC3519B
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 130 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 10 MHz
Collector Capacitance (Cc): 250 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO3P
2SC3519B Transistor Equivalent Substitute - Cross-Reference Search
2SC3519B Datasheet (PDF)
2sc3519b.pdf
RoHS 2SC3519B Series RoHS SEMICONDUCTORNell High Power ProductsSilicon NPN Epitaxial Planar Transistor(Complement to type 2SA1386B)15A/160V, 180V/130W15.60.44.80.29.62.00.13.20,12TO-3P(B)3+0.2+0.20.651.05-0.1-0.1FEATURES5.450.1 5.450.11.4 Recommend for 105W high Fiderity audio frequency B C E amplifier output stageC Complemen
2sc3519b-a.pdf
RoHS 2SC3519B Series RoHS SEMICONDUCTORNell High Power ProductsSilicon NPN Epitaxial Planar Transistor(Complement to type 2SA1386B)15A/160V, 180V/130W15.60.44.80.29.62.00.13.20,12TO-3P(B)3+0.2+0.20.651.05-0.1-0.1FEATURES5.450.1 5.450.11.4 Recommend for 105W high Fiderity audio frequency B C E amplifier output stageC Complemen
2sc3519.pdf
LAPT 2SC3519/3519ASilicon NPN Epitaxial Planar Transistor (Complement to type 2SA1386/A)Application : Audio and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)External Dimensions MT-100(TO3P)RatingsRatingsSymbol UnitSymbol Conditions Unit2SC3519 2SC3519A2SC3519 2SC3519A0.24.80.415.6VCBO 0.1160 180 V 100max A 9.6
2sc3519 2sc3519a.pdf
isc Silicon NPN Power Transistors 2SC3519/ADESCRIPTIONCollector-Emitter Breakdown Voltage-V = 160V(Min)-2SC3519(BR)CEO= 180V(Min)-2SC3519AGood Linearity of hFEComplement to Type 2SA1386/AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25
2sc3519 a.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2SC3519/A DESCRIPTION Collector-Emitter Breakdown Voltage- V(BR)CEO= 160V(Min)-2SC3519 = 180V(Min)-2SC3519A Good Linearity of hFE Complement to Type 2SA1386/A APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE U
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
