2SC3646T-TD-E Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC3646T-TD-E
SMD Transistor Code: CB
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 120 MHz
Collector Capacitance (Cc): 8.5 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: SOT89
2SC3646T-TD-E Transistor Equivalent Substitute - Cross-Reference Search
2SC3646T-TD-E Datasheet (PDF)
2sa1416s 2sa1416t 2sc3646s 2sc3646t.pdf
Ordering number : EN2005C2SA1416/2SC3646Bipolar Transistorhttp://onsemi.com() ) ( ), (100V, ( 1A, Low VCE sat PNP)NPN Single PCPFeatures Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Fast switching speed Ultrasmall size making it easy to provide high-density, small-sized hybrid ICsSpecifications ( ) : 2SA1416Absol
2sa1416 2sc3646.pdf
Ordering number : EN2005B2SA1416 / 2SC3646SANYO SemiconductorsDATA SHEETPNP / NPN Epitaxial Planar Silicon Transistors2SA1416 / 2SC3646High-Voltage Switching ApplicationsFeatures Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity. Fast switching speed. Ultrasmall size making it easy to provide high-density, small-sized hybrid IC
2sc3646.pdf
Ordering number:EN2005APNP/NPN Epitaxial Planar Silicon Transistors2SA1416/2SC3646High-Voltage Switching ApplicationsFeatures Package Dimensions Adoption of FBET, MBIT processes.unit:mm High breakdown voltage and large current capacity.2038 Fast switching time.[2SA1416/2SC3646] Very small size making it easy to provide high-density, small-sized hybrid ICs.E
2sa1416 2sc3646.pdf
DATA SHEETwww.onsemi.comBipolar TransistorELECTRICAL CONNECTION22()100 V, ()1 A, Low VCE(sat), (PNP)NPN Single PCP1: Base1 12: Collector3: Emitter2SA1416, 2SC36463 32SA1416 2SC3646Features Adoption of FBET and MBIT Processes High Breakdown Voltage and Large Current Capacity Fast Switching Speed12 Ultrasmall Size Making it Easy to Provi
2sc3646.pdf
SMD Type TransistorsNPN Transistors2SC36461.70 0.1 Features High breakdown voltage and large current capacity. Fast switching speed. Complementary to 2SA14160.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter Voltage VCEO 100 V Emitter
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2SB1140
