2SC3649S-TD-E Specs and Replacement
Type Designator: 2SC3649S-TD-E
SMD Transistor Code: CE
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 180 V
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 120 MHz
Collector Capacitance (Cc): 14 pF
Forward Current Transfer Ratio (hFE), MIN: 140
Package: SOT89
2SC3649S-TD-E Substitution
- BJT ⓘ Cross-Reference Search
2SC3649S-TD-E datasheet
2sa1419s 2sa1419s-td-h 2sa1419t 2sa1419t-td-h 2sc3649s 2sc3649s-td-h 2sc3649t 2sc3649t-td-h.pdf ![]()
Ordering number EN2007C 2SA1419/2SC3649 Bipolar Transistor http //onsemi.com ( ) ( ) ( ) ( ) 160V, 1.5A, Low VCE sat , PNP NPN Single PCP Features Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Ultrasmall size making it easy to provide high-density, small-sized hybrid IC s Specifications ( ) 2SA1419 Absolute Maximum Ratings at... See More ⇒
Ordering number EN2007A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1419/2SC3649 High-Voltage Switching Applications Features Package Dimensions Adoption of FBET, MBIT processes. unit mm High breakdown voltage and large current capacity. 2038 Very small size making it easy to provide high- [2SA1419/2SC3649] density hybrid ICs. E Emitter C Collector B Base ( ... See More ⇒
Ordering number EN2007B 2SA1419 / 2SC3649 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA1419 / 2SC3649 High-Voltage Switching Applications Features Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity. Ultrasmall size making it easy to provide high-density, small-sized hybrid IC s. Specifications ( ) ... See More ⇒
Ordering number EN2007C 2SA1419/2SC3649 Bipolar Transistor http //onsemi.com ( ) ( ) ( ) ( ) 160V, 1.5A, Low VCE sat , PNP NPN Single PCP Features Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Ultrasmall size making it easy to provide high-density, small-sized hybrid IC s Specifications ( ) 2SA1419 Absolute Maximum Ratings at... See More ⇒
Detailed specifications: 2SC3588-Z, 2SC3631-Z, 2SC3646S-TD-E, 2SC3646T-TD-E, 2SC3647S-TD-E, 2SC3647T-TD-E, 2SC3648S-TD-E, 2SC3648T-TD-E, 2SD718, 2SC3649S-TD-H, 2SC3649T-TD-E, 2SC3649T-TD-H, 2SC3679B, 2SC3794A, 2SC3852-220FA, 2SC3866-220F, 2SC3906KFRA
Keywords - 2SC3649S-TD-E pdf specs
2SC3649S-TD-E cross reference
2SC3649S-TD-E equivalent finder
2SC3649S-TD-E pdf lookup
2SC3649S-TD-E substitution
2SC3649S-TD-E replacement
History: BU2523DX
🌐 : EN ES РУ
LIST
Last Update
BJT: GA1A4M | SBT42 | 2SA200-Y
Popular searches
2sd330 replacement | a1273 transistor | 2sc1384 equivalent | 2sd786 | a940 transistor | 2sc1815 replacement | 2sc2383 | c3198 transistor





