2SC3649S-TD-H Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC3649S-TD-H
SMD Transistor Code: CE
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 180 V
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 120 MHz
Collector Capacitance (Cc): 14 pF
Forward Current Transfer Ratio (hFE), MIN: 140
Noise Figure, dB: -
Package: SOT89
2SC3649S-TD-H Transistor Equivalent Substitute - Cross-Reference Search
2SC3649S-TD-H Datasheet (PDF)
2sa1419s 2sa1419s-td-h 2sa1419t 2sa1419t-td-h 2sc3649s 2sc3649s-td-h 2sc3649t 2sc3649t-td-h.pdf
Ordering number : EN2007C2SA1419/2SC3649Bipolar Transistorhttp://onsemi.com() () ( ) ( )160V, 1.5A, Low VCE sat , PNP NPN Single PCPFeatures Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Ultrasmall size making it easy to provide high-density, small-sized hybrid ICsSpecifications ( ) : 2SA1419Absolute Maximum Ratings at
2sc3649.pdf
Ordering number:EN2007APNP/NPN Epitaxial Planar Silicon Transistors2SA1419/2SC3649High-Voltage Switching ApplicationsFeatures Package Dimensions Adoption of FBET, MBIT processes.unit:mm High breakdown voltage and large current capacity.2038 Very small size making it easy to provide high-[2SA1419/2SC3649]density hybrid ICs.E : EmitterC : CollectorB : Base(
2sa1419 2sc3649.pdf
Ordering number : EN2007B2SA1419 / 2SC3649SANYO SemiconductorsDATA SHEETPNP / NPN Epitaxial Planar Silicon Transistors2SA1419 / 2SC3649High-Voltage Switching ApplicationsFeatures Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity. Ultrasmall size making it easy to provide high-density, small-sized hybrid ICs.Specifications ( ) :
2sa1419 2sc3649.pdf
Ordering number : EN2007C2SA1419/2SC3649Bipolar Transistorhttp://onsemi.com() () ( ) ( )160V, 1.5A, Low VCE sat , PNP NPN Single PCPFeatures Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Ultrasmall size making it easy to provide high-density, small-sized hybrid ICsSpecifications ( ) : 2SA1419Absolute Maximum Ratings at
2sc3649.pdf
SMD Type TransistorsNPN Transistors2SC36491.70 0.1 Features High breakdown voltage and large current capacity. Complementary to 2SA14190.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 180 Collector - Emitter Voltage VCEO 160 V Emitter - Base Voltage VEBO 6 Coll
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
