2SC3649T-TD-H Datasheet and Replacement

Ordering number : EN2007C2SA1419/2SC3649Bipolar Transistorhttp://onsemi.com() () ( ) ( )160V, 1.5A, Low VCE sat , PNP NPN Single PCPFeatures Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Ultrasmall size making it easy to provide high-density, small-sized hybrid ICsSpecifications ( ) : 2SA1419Absolute Maximum Ratings at

Ordering number:EN2007APNP/NPN Epitaxial Planar Silicon Transistors2SA1419/2SC3649High-Voltage Switching ApplicationsFeatures Package Dimensions Adoption of FBET, MBIT processes.unit:mm High breakdown voltage and large current capacity.2038 Very small size making it easy to provide high-[2SA1419/2SC3649]density hybrid ICs.E : EmitterC : CollectorB : Base(

Ordering number : EN2007B2SA1419 / 2SC3649SANYO SemiconductorsDATA SHEETPNP / NPN Epitaxial Planar Silicon Transistors2SA1419 / 2SC3649High-Voltage Switching ApplicationsFeatures Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity. Ultrasmall size making it easy to provide high-density, small-sized hybrid ICs.Specifications ( ) :

Ordering number : EN2007C2SA1419/2SC3649Bipolar Transistorhttp://onsemi.com() () ( ) ( )160V, 1.5A, Low VCE sat , PNP NPN Single PCPFeatures Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Ultrasmall size making it easy to provide high-density, small-sized hybrid ICsSpecifications ( ) : 2SA1419Absolute Maximum Ratings at

SMD Type TransistorsNPN Transistors2SC36491.70 0.1 Features High breakdown voltage and large current capacity. Complementary to 2SA14190.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 180 Collector - Emitter Voltage VCEO 160 V Emitter - Base Voltage VEBO 6 Coll