2SC3866-220F
Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC3866-220F
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 40
W
Maximum Collector-Base Voltage |Vcb|: 900
V
Maximum Collector-Emitter Voltage |Vce|: 800
V
Maximum Emitter-Base Voltage |Veb|: 10
V
Maximum Collector Current |Ic max|: 3
A
Max. Operating Junction Temperature (Tj): 150
°C
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package:
TO220F
2SC3866-220F
Transistor Equivalent Substitute - Cross-Reference Search
2SC3866-220F
Datasheet (PDF)
..1. Size:223K inchange semiconductor
2sc3866-220f.pdf 
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3866 DESCRIPTION With TO-220F package High speed switching High voltage High reliability APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers PINNING PIN DESCRIPTION1 Base 2 Collector Fig.1 simplified outline (
7.3. Size:62K jmnic
2sc3866.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistor 2SC3866 DESCRIPTION High Breakdown Voltage- : V(BR)CBO= 900V(Min) High Switching Speed High Reliability APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Coll
7.4. Size:172K cn sptech
2sc3866.pdf
SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SC3866DESCRIPTIONHigh Breakdown Voltage: V = 900V(Min)(BR)CBOHigh Switching SpeedHigh ReliabilityAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base V
7.5. Size:225K inchange semiconductor
2sc3866a.pdf
isc Silicon NPN Power Transistor 2SC3866ADESCRIPTIONHigh Breakdown Voltage: V = 1000V(Min)(BR)CBOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXIMUM RATINGS(T =25
7.6. Size:193K inchange semiconductor
2sc3866.pdf
isc Silicon NPN Power Transistor 2SC3866DESCRIPTIONHigh Breakdown Voltage: V = 900V(Min)(BR)CBOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXIMUM RATINGS(T =25
Datasheet: 2N3200
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