2SC5226A-5-TL-E Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC5226A-5-TL-E
SMD Transistor Code: LN
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.07 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 5000 MHz
Collector Capacitance (Cc): 0.75 pF
Forward Current Transfer Ratio (hFE), MIN: 135
Noise Figure, dB: -
Package: SOT323
2SC5226A-5-TL-E Transistor Equivalent Substitute - Cross-Reference Search
2SC5226A-5-TL-E Datasheet (PDF)
2sc5226a-4 2sc5226a-5.pdf
Ordering number : ENA1062A2SC5226ARF Transistorhttp://onsemi.com10V, 70mA, fT=7GHz, NPN Single MCPFeatures Low-noise : NF=1.0dB typ (f=1GHz) High gain 2 : S21e =12dB typ (f=1GHz) High cut-off frequency : fT=7GHz typSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltage VCBO 20 VCollector-
2sc5226a.pdf
Ordering number : ENA1062 2SC5226ASANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorVHF to UHF Wide-Band Low-Noise2SC5226AAmplifier ApplicationsFeatures Low-noise : NF=1.0dB typ (f=1GHz). High gain : S21e2=12dB typ (f=1GHz). High cut-off frequency : fT=7GHz typ.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditio
2sc5226a.pdf
Ordering number : ENA1062A2SC5226ARF Transistorhttp://onsemi.com10V, 70mA, fT=7GHz, NPN Single MCPFeatures Low-noise : NF=1.0dB typ (f=1GHz) High gain 2 : S21e =12dB typ (f=1GHz) High cut-off frequency : fT=7GHz typSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltage VCBO 20 VCollector-
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
