2SC5488A-TL-H Specs and Replacement
Type Designator: 2SC5488A-TL-H
SMD Transistor Code: LN
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.07 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 5000 MHz
Collector Capacitance (Cc): 0.7 pF
Forward Current Transfer Ratio (hFE), MIN: 90
Package: SC81
2SC5488A-TL-H Substitution
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2SC5488A-TL-H datasheet
Ordering number ENA1089 2SC5488A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise 2SC5488A Amplifier Applications Features Low-noise NF=1.0dB typ (f=1GHz). High gain S21e 2=12dB typ (f=1GHz). High cut-off frequency fT=7GHz typ. Ultrasmall, slim flat-lead package (1.4mm 0.8mm 0.6mm). Halogen fr... See More ⇒
Ordering number ENA1089A 2SC5488A RF Transistor http //onsemi.com 10V, 70mA, fT=7GHz, NPN Single SSFP Features Low-noise NF=1.0dB typ (f=1GHz) High gain 2 S21e =12dB typ (f=1GHz) High cut-off frequency fT=7GHz typ Ultrasmall, slim flat-lead package (1.4mm 0.8mm 0.6mm) Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25 ... See More ⇒
Ordering number ENN6288 NPN Epitaxial Planar Silicon Transistor 2SC5488 VHF to UHF Low-Noise Wide-Band Amplifier Applications Features Package Dimensions Low noise NF=1.0dB typ (f=1GHz). unit mm 2 High gain S21e =12dB typ (f=1GHz). 2159 High cutoff frequency fT=7GHz typ. [2SC5488] Ultrasmall, slim flat-lead package. (1.4mm 0.8mm 0.6mm) 1.4 0.1 0... See More ⇒
Detailed specifications: 2SC5347AE-TD-E, 2SC5347AF-TD-E, 2SC536K, 2SC536S, 2SC5374A-TL-E, 2SC5397, 2SC5415AE-TD-E, 2SC5415AF-TD-E, 13003, 2SC5490A-TL-H, 2SC5501A-4-TR-E, 2SC5536A-TL-H, 2SC5551AE-TD-E, 2SC5551AF-TD-E, 2SC5566-TD-E, 2SC5569-TD-E, 2SC5621
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