2SC5551AE-TD-E Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC5551AE-TD-E
SMD Transistor Code: EB
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1.3 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 3500 MHz
Collector Capacitance (Cc): 2.9 pF
Forward Current Transfer Ratio (hFE), MIN: 90
Noise Figure, dB: -
Package: SOT89
2SC5551AE-TD-E Transistor Equivalent Substitute - Cross-Reference Search
2SC5551AE-TD-E Datasheet (PDF)
2sc5551ae 2sc5551af.pdf
Ordering number : ENA1118A2SC5551ARF Transistorhttp://onsemi.com30V, 300mA, fT=3.5GHz, NPN Single PCPFeatures High fT : (fT=3.5GHz typ) Large current : (IC=300mA) Large allowable collector dissipation (1.3W max)SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltage VCBO 40 VCollector-to-Emitter Volta
2sc5551a.pdf
Ordering number : ENA1118 2SC5551ASANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorHigh-Frequency Medium-Output2SC5551AAmplifier ApplicationsFeatures High fT : (fT=3.5GHz typ). Large current : (IC=300mA). Large allowable collector dissipation (1.3W max).SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings Un
2sc5551.pdf
Ordering number:ENN6328NPN Epitaxial Planar Silicon Transistor2SC5551High-Frequency Medium-OutputAmplifier ApplicationsFeatures Package Dimensions High fT : (fT=3.5GHz typ).unit:mm Large current : (IC=300mA).2038A Large allowable collector dissipation (1.3W max).[2SC5551]4.51.51.60.4 0.53 2 10.41.53.01 : Base0.752 : Collector3 : EmitterSA
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
