2SC6097-E pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

2SC6097-E Specs and Replacement

Type Designator: 2SC6097-E

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 15 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 6.5 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 390 MHz

Collector Capacitance (Cc): 18 pF

Forward Current Transfer Ratio (hFE), MIN: 300

Noise Figure, dB: -

Package: TO251

2SC6097-E Substitution

- BJT ⓘ Cross-Reference Search

2SC6097-E datasheet

..1. Size:307K onsemi

2sc6097-e 2sc6097.pdf pdf_icon

Ordering number ENA0412A 2SC6097 Bipolar Transistor http //onsemi.com ( ) 60V, 3A, Low VCE sat , NPN Single TP/TP-FA Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter Features Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power dissi... See More ⇒

7.1. Size:50K sanyo

2sc6097.pdf pdf_icon

Ordering number ENA0412 2SC6097 NPN Epitaxial Planar Silicon Transistor 2SC6097 High-Current Switching Applications Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter. Features Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dis... See More ⇒

7.2. Size:410K onsemi

2sc6097.pdf pdf_icon