All Transistors. 2SC6114T1GP Datasheet

 

2SC6114T1GP Datasheet and Replacement


   Type Designator: 2SC6114T1GP
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 130 MHz
   Collector Capacitance (Cc): 1 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: SOT923
 
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2SC6114T1GP Datasheet (PDF)

 ..1. Size:75K  chenmko
 2sc6114t1gp.pdf pdf_icon

2SC6114T1GP

CHENMKO ENTERPRISE CO.,LTD2SC6114T1GPSURFACE MOUNTTransistorVOLTAGE 50 Volts CURRENT 0.1 AmpereAPPLICATION* Small signal low frequency amplifier.FEATURE* Surface mount package. (SOT-923)SOT-923* Low cob. Cob=0.2pF(Typ.)* PC= 150mW0.18~0.26 0.08~0.14CONSTRUCTION(3)* NPN Silicon Transistor(1) (2)0.11~0.190.36~0.410.35(typ)C (3) 0.565~0.635CIRCUITSOT-923

 7.1. Size:77K  rohm
 2sc6114.pdf pdf_icon

2SC6114T1GP

2SC6114 Transistors Small signal low frequency amplifier (50V, 100mA) 2SC6114 Applications VMN3Small signal low frequency amplifier Features 0.220.16(3)1) Low Cob. Cob=2.0pF (Typ.) 2) Complements the 2SA2199. (1) (2) Structure 0.370.170.35NPN silicon epitaxial 0.6planar transistor (1) Base(2) EmitterAbbreviated symbol : N(3) Collector Dimensio

 7.2. Size:352K  chenmko
 2sc6114g5gp.pdf pdf_icon

2SC6114T1GP

CHENMKO ENTERPRISE CO.,LTD2SC6114G5GPSURFACE MOUNTTransistorVOLTAGE 50 Volts CURRENT 0.1 AmpereAPPLICATION* Small signal low frequency amplifier.FEATURE* Surface mount package. (FBPT-1023) * Low cob. Cob=0.2pF(Typ.)* PC= 150mW CONSTRUCTION* NPN Silicon Transistor C (3)

 8.1. Size:46K  sanyo
 2sc6118ls.pdf pdf_icon

2SC6114T1GP

Ordering number : ENA0578 2SC6118LSSANYO SemiconductorsDATA SHEETNPN Triple Diffused Planar Silicon TransistorColor TV Horizontal Deflection2SC6118LSOutput ApplicationsFeatures High speed. High breakdown voltage (VCBO=1500V). High reliability (Adoption of HVP process). Adoption of MBIT process. On-chip damper diode.SpecificationsAbsolute Maximum Rating

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Datasheet: 2SC6097-E , 2SC6097-TL-E , 2SC6098-E , 2SC6098-TL-E , 2SC6099-E , 2SC6099-TL-E , 2SC6105 , 2SC6114G5GP , 2SC828 , 2SC6120 , 2SC6123 , 2SC6123-Z , 2SC6145 , 2SC6145A , 2SC945-GR , 2SC945LT1 , 2SC945-Y .

History: 2N4969 | 2SD917

Keywords - 2SC6114T1GP transistor datasheet

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