MJE13001C2 Datasheet. Specs and Replacement

Type Designator: MJE13001C2  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 600 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 9 V

Maximum Collector Current |Ic max|: 0.25 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 5 MHz

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TO92L

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MJE13001C2 datasheet

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MJE13001C2

MJE13001C2(3DD13001C2) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V CBO V 400 V CEO V 9.0 V EBO I 0.25 A C P (Ta=25 ) 1.0 W C T 150 j T -55 150 stg ... See More ⇒

 5.1. Size:765K  blue-rocket-elect

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MJE13001C2

MJE13001C1 Rev.F Mar.-2016 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High Voltage Capability High Speed Switching. / Applications , , High frequency electronic li... See More ⇒

 5.2. Size:170K  foshan

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MJE13001C2

MJE13001C1(3DD13001C1) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit VCBO 600 V VCEO 400 V VEBO 9.0 V IC 0.25 A PC(Ta=25 ) 1.0 W Tj 150 Tstg -55 150 /Electrical charac... See More ⇒

 5.3. Size:180K  foshan

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MJE13001C2

MJE13001CT(3DD13001CT) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V CBO V 400 V CEO V 9.0 V EBO I 0.25 A C P (Ta=25 ) 1.0 W C T 150 j T -55 150 stg ... See More ⇒

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Detailed specifications: MJE1123, MJE13001A0, MJE13001A1, MJE13001A2, MJE13001AT, MJE13001B1, MJE13001C0, MJE13001C1, C1815, MJE13001CT, MJE13001DE1, MJE13001E1, MJE13001E2, MJE13002DE1, MJE13002DG1, MJE13002E1, MJE13002E2

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