MJE13002G Datasheet. Specs and Replacement

Type Designator: MJE13002G  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 300 V

Maximum Collector-Emitter Voltage |Vce|: 600 V

Maximum Emitter-Base Voltage |Veb|: 9 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 4 MHz

Collector Capacitance (Cc): 21 pF

Forward Current Transfer Ratio (hFE), MIN: 5

Noise Figure, dB: -

Package: TO126S TO92

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MJE13002G datasheet

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MJE13002G

UNISONIC TECHNOLOGIES CO., LTD MJE13002-E NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13002-E designed for use in high volatge, high speed,power switching in inductive circuit, It is particularly suited for 115 and 220V switchmode applications such as switching regulator s,inverters, DC-DC converter, Motor co... See More ⇒

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MJE13002G

MJE13002G2(3DD13002G2) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V ... See More ⇒

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MJE13002G

MJE13002G5(3DD13002G5) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V ... See More ⇒

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MJE13002G

MJE13002G1(3DD13002G1) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V ... See More ⇒

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Detailed specifications: MJE13002DE1, MJE13002DG1, MJE13002E1, MJE13002E2, MJE13002F1, MJE13002F2, MJE13002F5, MJE13002F6, TIP3055, MJE13002G1, MJE13002G2, MJE13002G5, MJE13002G6, MJE13002H1, MJE13002H5, MJE13002H6, MJE13002I5

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