MJE13003DK1 Specs and Replacement
Type Designator: MJE13003DK1
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 600 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 1.75 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 5 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TO92
MJE13003DK1 Substitution
- BJT ⓘ Cross-Reference Search
MJE13003DK1 datasheet
MJE13003DK1(3DD13003DK1) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V... See More ⇒
MJE13003DK3(3DD13003DK3) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 700 V... See More ⇒
MJE13003DK5(3DD13003DK5) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V... See More ⇒
MJE13003DK7(3DD13003DK7) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V... See More ⇒
Detailed specifications: MJE13002I6, MJE13002I7, MJE13002VH1, MJE13003DG1, MJE13003DG5, MJE13003DI1, MJE13003DI3, MJE13003DI5, 2SC4793, MJE13003DK3, MJE13003DK5, MJE13003DK7, MJE13003DN5, MJE13003E1, MJE13003F1, MJE13003F2, MJE13003F5
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History: SBP13003H
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