MJE13003H6 Datasheet, Equivalent, Cross Reference Search
Type Designator: MJE13003H6
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 600 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 1.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 5 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO126F
MJE13003H6 Transistor Equivalent Substitute - Cross-Reference Search
MJE13003H6 Datasheet (PDF)
mje13003h6.pdf
MJE13003H6(3DD13003H6) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V
mje13003hv.pdf
SEMICONDUCTOR MJE13003HVTECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORSWITCHING REGULATOR APPLICATION.AHIGH VOLTAGE AND HIGH SPEED BDCSWITCHING APPLICATION.EFFEATURESExcellent Switching TimesG: ton=1.1 S(Typ.), tf=0.7 S(Typ.), at IC=1AHHigh Collector Voltage : VCBO=900V.DIM MILLIMETERSJA 8.3 MAXKB 5.8LC 0.7_+D 3.2 0.1E 3.5_+F 11.0 0.3
mje13003ht 1.pdf
Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationMJE NPN / MJE NPN SERIES TRANSISTORS MJE13003HTMJE NPN / MJE NPN SERIES TRANSISTORS MJE13003HTMJ
mje13003ht.pdf
Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationMJE NPN / MJE NPN SERIES TRANSISTORS MJE13003HTMJE NPN / MJE NPN SERIES TRANSISTORS MJE13003HTMJ
mje13003h1.pdf
MJE13003H1(3DD13003H1) NPN /SILICON NPN TRANSISTOR: Purpose: High frequency electronic lighting ballast applicationsconverters, inverters,switching regulators, etc./Absolute maximum ratings(Ta=25) Symbol Rating UnitVCBO 600 VVCEO
mje13003h5.pdf
MJE13003H5(3DD13003H5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V
mje13003hn6.pdf
MJE13003HN6(3DD13003HN6) NPN /SILICON NPN TRANSISTOR : Purpose: For switching power supply and other power switching circuit. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 1400 V CBO V 800 V CEO V 9 V EBO I 1.5 A C P (Ta=25) 1.25 W CP
mje13003hk5.pdf
MJE13003HK5(3DD13003HK5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 900 V
mje13003h3.pdf
MJE13003H3(3DD13003H3) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
