MJE13003I7 Datasheet and Replacement
Type Designator: MJE13003I7
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 600 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 5 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO220
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MJE13003I7 Datasheet (PDF)
mje13003i7.pdf

MJE13003I7(3DD13003I7) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V
mje13003i5.pdf

MJE13003I5(BR3DD13003I5Q) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-126(R) NPN Silicon NPN transistor in a TO-126(R) Plastic Package. / Features High Voltage Capability High Speed Switching. / Applications High
mje13003i.pdf

SEMICONDUCTORMJE13003ITECHNICAL DATASWITCHING REGULATOR APPLICATION.HIGH VOLTAGE AND HIGH SPEED SWITCHING APPLICATION.DIM MILLIMETERSA 2.20 0.2B 1.50 0.15FEATURESc 0.5 0.07Excellent Switching TimesD 6.50 0.151 2 3: ton=1.1S(Max.), tf=0.5S(Max.), at IC=1.0A e 2.30 typL 7.70 0.2High Collector Voltage : VCBO=700V.A1 1.20 0.05b1 0.8 0.1
mje13003i6.pdf

MJE13003I6(3DD13003I6) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: APT13003SU | 3DD13003U6D | WBP13003D
Keywords - MJE13003I7 transistor datasheet
MJE13003I7 cross reference
MJE13003I7 equivalent finder
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History: APT13003SU | 3DD13003U6D | WBP13003D



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