MJE13003K4 Specs and Replacement
Type Designator: MJE13003K4
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 600 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 5 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TO252
MJE13003K4 Substitution
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MJE13003K4 datasheet
MJE13003K4 Rev.E May.-2016 DATA SHEET / Descriptions TO-252 NPN Silicon NPN transistor in a TO-252 Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic lighting, sw... See More ⇒
MJE13003K4(3DD13003K4) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V ... See More ⇒
UNISONIC TECHNOLOGIES CO., LTD MJE13003K NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR DESCRIPTION These devices are designed for high voltage, high speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE. FEATURES * Reverse biased SOA with inductive load @ Tc=100 C * Inductive switching ma... See More ⇒
MJE13003K3(3DD13003K3) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 700 V ... See More ⇒
Detailed specifications: MJE13003I1, MJE13003I5, MJE13003I6, MJE13003I7, MJE13003J1, MJE13003J1G, MJE13003K, MJE13003K3, D209L, MJE13003K5, MJE13003K6, MJE13003K7, MJE13003K8, MJE13003L1, MJE13003L3, MJE13003L5, MJE13003L6
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