MJE13003K7 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

MJE13003K7 Specs and Replacement

Type Designator: MJE13003K7

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 50 W

Maximum Collector-Base Voltage |Vcb|: 600 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 9 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 5 MHz

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TO220

MJE13003K7 Substitution

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MJE13003K7 datasheet

..1. Size:204K foshan

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MJE13003K7(3DD13003K7) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V ... See More ⇒

5.1. Size:308K utc

mje13003k.pdf pdf_icon

UNISONIC TECHNOLOGIES CO., LTD MJE13003K NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR DESCRIPTION These devices are designed for high voltage, high speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE. FEATURES * Reverse biased SOA with inductive load @ Tc=100 C * Inductive switching ma... See More ⇒

5.2. Size:725K blue-rocket-elect

mje13003k4.pdf pdf_icon

MJE13003K4 Rev.E May.-2016 DATA SHEET / Descriptions TO-252 NPN Silicon NPN transistor in a TO-252 Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic lighting, sw... See More ⇒

5.3. Size:207K foshan

mje13003k4.pdf pdf_icon

MJE13003K4(3DD13003K4) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V ... See More ⇒