MJE13003L1 Specs and Replacement
Type Designator: MJE13003L1
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 900 V
Maximum Collector-Emitter Voltage |Vce|: 530 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 5 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TO92
MJE13003L1 Substitution
- BJT ⓘ Cross-Reference Search
MJE13003L1 datasheet
MJE13003L1(3DD13003L1) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 900 V ... See More ⇒
MJE13003LF5(3DD13003LF5) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 400 V ... See More ⇒
MJE13003L5(3DD13003L5) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 900 V ... See More ⇒
MJE13003LF1(3DD13003LF1) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 400 V ... See More ⇒
Detailed specifications: MJE13003J1G, MJE13003K, MJE13003K3, MJE13003K4, MJE13003K5, MJE13003K6, MJE13003K7, MJE13003K8, D965, MJE13003L3, MJE13003L5, MJE13003L6, MJE13003LF1, MJE13003LF5, MJE13003M1, MJE13003M3, MJE13003M5
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