MJE13003M6 Datasheet and Replacement
Type Designator: MJE13003M6
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 700 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 1.8 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 5 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO126F
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MJE13003M6 Datasheet (PDF)
mje13003m6.pdf

MJE13003M6(3DD13003M6) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V
mje13003m7.pdf

MJE13003M7(3DD13003M7) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V
mje13003m8.pdf

MJE13003M8(3DD13003M8) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V
mje13003m5.pdf

MJE13003M5(3DD13003M5) NPN /SILICON NPN TRANSISTOR: Purpose: High frequency electronic lighting ballast applicationsconverters, inverters,switching regulators, etc./Absolute maximum ratings(Ta=25) Symbol Rating UnitVCBO 700 VVCEO
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Keywords - MJE13003M6 transistor datasheet
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History: CR13003 | 2S3221



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