MJE13003M8 Datasheet and Replacement
Type Designator: MJE13003M8
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 700 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 1.8 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 5 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO220F
MJE13003M8 Substitution
MJE13003M8 Datasheet (PDF)
mje13003m8.pdf

MJE13003M8(3DD13003M8) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V
mje13003m7.pdf

MJE13003M7(3DD13003M7) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V
mje13003m5.pdf

MJE13003M5(3DD13003M5) NPN /SILICON NPN TRANSISTOR: Purpose: High frequency electronic lighting ballast applicationsconverters, inverters,switching regulators, etc./Absolute maximum ratings(Ta=25) Symbol Rating UnitVCBO 700 VVCEO
mje13003m6.pdf

MJE13003M6(3DD13003M6) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V
Datasheet: MJE13003L6 , MJE13003LF1 , MJE13003LF5 , MJE13003M1 , MJE13003M3 , MJE13003M5 , MJE13003M6 , MJE13003M7 , A1266 , MJE13003N5 , MJE13003N8 , MJE13003VF1 , MJE13003VG1 , MJE13003VG5 , MJE13003VH1 , MJE13003VH5 , MJE13003VI1 .
Keywords - MJE13003M8 transistor datasheet
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