MJE13009X7 Datasheet. Specs and Replacement
Type Designator: MJE13009X7 📄📄
SMD Transistor Code: BRX713009
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 90 W
Maximum Collector-Base Voltage |Vcb|: 700 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 5 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO220
- BJT ⓘ Cross-Reference Search
MJE13009X7 datasheet
..1. Size:463K blue-rocket-elect
mje13009x7.pdf 
MJE13009X7(BR3DD13009X7R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic lighting ballast applications . ... See More ⇒
5.1. Size:423K blue-rocket-elect
mje13009x8.pdf
MJE13009X8(BR3DD13009X8F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic lighting ballast applications. ... See More ⇒
5.2. Size:445K blue-rocket-elect
mje13009x9.pdf
MJE13009X9(BR3DD13009X9P) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-3P NPN Silicon NPN Transistor in a TO-3P Plastic Package. / Features High Speed Switching / Applications High frequency electronic lighting ballast applications. / Equivalent Circuit ... See More ⇒
6.1. Size:451K motorola
mje13009.pdf
Order this document MOTOROLA by MJE13009/D SEMICONDUCTOR TECHNICAL DATA MJE13009* *Motorola Preferred Device Designer's Data Sheet 12 AMPERE SWITCHMODE Series NPN SILICON POWER TRANSISTOR NPN Silicon Power Transistors 400 VOLTS The MJE13009 is designed for high voltage, high speed power switching inductive 100 WATTS circuits where fall time is critical. They are particularl... See More ⇒
6.2. Size:78K st
mje13009.pdf
MJE13009 SILICON NPN SWITCHING TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The MJE13009 is a multiepitaxial mesa NPN transistor. It is mounted in Jedec TO-220 plastic package, intended for use in motor controls, switching regulators, deflection circuits, etc. 3 2 1 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCEO Collector-Em... See More ⇒
6.3. Size:189K onsemi
mje13009-d.pdf
MJE13009G SWITCHMODEt Series NPN Silicon Power Transistors The MJE13009G is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are http //onsemi.com particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls, 12 AMPERE Solenoid/Relay drivers and Deflection circuits. NPN S... See More ⇒
6.4. Size:440K utc
mje13009-k.pdf
UNISONIC TECHNOLOGIES CO., LTD MJE13009-K NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009-K is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch mode applications such as Switching Regulators, Inverters, Motor Controls, Sole... See More ⇒
6.5. Size:424K utc
mje13009-p.pdf
UNISONIC TECHNOLOGIES CO., LTD MJE13009-P NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009-P is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch mode applications such as Switching Regulators, Inverters, Motor Controls, Sole... See More ⇒
6.6. Size:448K utc
mje13009g.pdf
UNISONIC TECHNOLOGIES CO., LTD MJE13009 NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch mode applications such as Switching Regulators, Inverters, Motor Controls, Solenoid... See More ⇒
6.7. Size:448K utc
mje13009.pdf
UNISONIC TECHNOLOGIES CO., LTD MJE13009 NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch mode applications such as Switching Regulators, Inverters, Motor Controls, Solenoid... See More ⇒
6.8. Size:183K utc
mje13009d.pdf
UNISONIC TECHNOLOGIES CO., LTD MJE13009D NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13009D is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage, high current capability, high switching speed and high reliability. The UTC MJE13009D is intended to be used in a energy-saving lig... See More ⇒
6.9. Size:280K kec
mje13009f.pdf
SEMICONDUCTOR MJE13009F TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. HIGH SPEED DC-DC CONVERTER APPLICATION. FEATURES Excellent Switching Times ton=1.1 S(Max.), tf=0.7 S(Max.), at IC=8A High Collector Voltage VCBO=700V. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Voltage 700 V... See More ⇒
6.10. Size:272K kec
mje13009.pdf
SEMICONDUCTOR MJE13009 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. HIGH SPEED DC-DC CONVERTER APPLICATION. FEATURES Excellent Switching Times ton=1.1 S(Max.), tf=0.7 S(Max.), at IC=8A High Collector Voltage VCBO=700V. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Voltage 700 V ... See More ⇒
6.11. Size:55K hsmc
hmje13009a.pdf
Spec. No. HE200206 HI-SINCERITY Issued Date 2002.02.01 Revised Date 2006.07.04 MICROELECTRONICS CORP. Page No. 1/6 HMJE13009A 12 AMPERE NPN SILICON POWER TRANSISTOR Description The HMJE13009A is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch-controls, Solenoid/Relay dri... See More ⇒
6.12. Size:252K sisemi
mje13009a.pdf
Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE /MJE SERIES TRANSISTORS MJE13009A NPN MJE /MJE SERIES TRANSISTORS MJE13009A NPN MJE ... See More ⇒
6.14. Size:207K sisemi
mje13009a 1.pdf
Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE /MJE SERIES TRANSISTORS MJE13009A NPN MJE /MJE SERIES TRANSISTORS MJE13009A NPN MJE ... See More ⇒
6.16. Size:450K blue-rocket-elect
mje13009zj.pdf
MJE13009ZJ(BR3DD13009ZJ) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220S NPN Silicon NPN transistor in a TO-220S Plastic Package. / Features High VCEO High IC. / Applications High frequency electronic lighting ballast applications. / Equ... See More ⇒
6.17. Size:232K foshan
mje13009z9.pdf
MJE13009Z9(3DD13009Z9) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 700 V CBO V 400 V CEO V 9.0 V EBO I 12 A C P (Ta=25 ) 2.0 W C P (Tc=25 ) 100 W C T 150 j ... See More ⇒
6.18. Size:233K foshan
mje13009z7.pdf
MJE13009Z7(3DD13009Z7) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 700 V CBO V 400 V CEO V 9.0 V EBO I 12 A C P (Ta=25 ) 2.0 W C P (Tc=25 ) 100 W C T 150 j ... See More ⇒
6.19. Size:215K inchange semiconductor
mje13009f.pdf
isc Silicon NPN Power Transistor MJE13009F DESCRIPTION Collector Emitter Sustaining Voltage V = 400V(Min.) CEO(SUS) Collector Saturation Voltage V = 1.5 (Max) @ I = 8.0A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high-voltage, high-speed, power swit- ching in inductive circuit, they are ... See More ⇒
6.20. Size:157K inchange semiconductor
mje13009.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJE13009 DESCRIPTION With TO-220C package High voltage ,high speed APPLICATIONS Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits PINNING PIN DESCRIPTION 1 Base Collector;... See More ⇒
6.21. Size:173K inchange semiconductor
mje13009-3pn.pdf
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors MJE13009 DESCRIPTION With TO-3PN package High voltage ,high speed APPLICATIONS Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits PINNING PIN DESCRIPTION 1 Base Collector;con... See More ⇒
Detailed specifications: MJE13007V7, MJE13007V8, MJE13007V9, MJE13007X7, MJE13007X8, MJE13007X9, MJE13009-3PN, MJE13009G, 2SD718, MJE13009X8, MJE13009X9, MJE13009Z7, MJE13009Z8, MJE13009Z9, MJE13011, MJE1320-ISC, MJE15028G
Keywords - MJE13009X7 pdf specs
MJE13009X7 cross reference
MJE13009X7 equivalent finder
MJE13009X7 pdf lookup
MJE13009X7 substitution
MJE13009X7 replacement
