MJE16014 Specs and Replacement
Type Designator: MJE16014
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 250 W
Maximum Collector-Base Voltage |Vcb|: 850 V
Maximum Collector-Emitter Voltage |Vce|: 450 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 20 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Collector Capacitance (Cc): 500 pF
Forward Current Transfer Ratio (hFE), MIN: 5
Package: TO3
MJE16014 Substitution
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MJE16014 datasheet
Order this document MOTOROLA by MJE16002/D SEMICONDUCTOR TECHNICAL DATA * MJE16002 Designer's Data Sheet * MJE16004 SWITCHMODE Series NPN Silicon Power Transistors *Motorola Preferred Device These transistors are designed for high voltage, high speed switching of inductive 5.0 AMPERE circuits where fall time and RBSOA are critical. They are particularly well suited for N... See More ⇒
isc Silicon NPN Power Transistor MJE16004 DESCRIPTION Collector Emitter Sustaining Voltage V = 400V(Min.) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high-voltage, high-speed switching of inductive circuits where fall time and RBSOA are critical. they are particularly wel... See More ⇒
Order this document MOTOROLA by MJE16204/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MJE16204 SCANSWITCH NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors POWER TRANSISTORS The MJE16204 is a state of the art SWITCHMODE bipolar power transistor. It is 6.0 AMPERES specifically designed for use in horizontal deflection circuits f... See More ⇒
Detailed specifications: MJE15028G , MJE15029G , MJE15030G , MJE15031G , MJE15032G , MJE15033G , MJE15034G , MJE15035G , TIP35C , MJE170G , MJE171G , MJE172G , MJE18004G , MJE18008G , MJE180G , MJE181G , MJE182G .
History: H2N4401
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History: H2N4401
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