All Transistors. MJE371G Datasheet

 

MJE371G Datasheet and Replacement


   Type Designator: MJE371G
   SMD Transistor Code: JE371
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 40 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO126
 

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MJE371G Datasheet (PDF)

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MJE371G

MJE371GPlastic Medium-PowerPNP Silicon TransistorThis device is designed for use in general-purpose amplifier andswitching circuits. Recommended for use in 5 to 20 Watt audioamplifiers utilizing complementary symmetry circuitry.http://onsemi.comFeatures High DC Current Gain4 AMPERES MJE371 is Complementary to NPN MJE521POWER TRANSISTOR These Devices are Pb-Free

 8.1. Size:122K  motorola
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MJE371G

Order this documentMOTOROLAby MJE371/DSEMICONDUCTOR TECHNICAL DATAMJE371Plastic Medium-Power PNP4 AMPERESilicon TransistorsPOWER TRANSISTORPNP SILICON. . . designed for use in generalpurpose amplifier and switching circuits. Recom-40 VOLTSmended for use in 5 to 20 Watt audio amplifiers utilizing complementary symmetry40 WATTScircuitry. DC Current Gain hFE

 8.2. Size:65K  central
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MJE371G

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

 8.3. Size:61K  onsemi
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MJE371G

MJE371Plastic Medium-PowerPNP Silicon TransistorThis device is designed for use in general-purpose amplifier andswitching circuits. Recommended for use in 5 to 20 Watt audioamplifiers utilizing complementary symmetry circuitry.http://onsemi.comFeatures DC Current Gain - hFE = 40 (Min) @ IC4 AMPERES= 1.0 AdcPOWER TRANSISTOR MJE371 is Complementary to NPN MJE521PNP

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

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